Attention to implementation of Group-IV alloys including SiGe, GeSn, SiGeSn, etc. into Thermoelectric (TE) devices is getting increased. Alloy effect effectively decreases heat propagation in a material, resulting in improvement of conversion efficiency of TE devices. Our groups are developing the growth technique of these alloys especially on insulator substrates and investigating the impact of crystallographic properties on TE conversion efficiency.

Ikeda laboratory
- Polycrystalline SiGe on insulator (SGOI)
- Si nanowire (NW)

Shimura laboratory
- Polycrystalline GeSn and Si-rich SiGeSn on insulator
- Sn-nanodot mediated solid-phase crystallization

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