Conference Proceedings:
- Proceedings of the 10th International SiGe, Ge, & Related Compounds: Materials, Processing, and Devices Symposium (ECS 2022 Fall Meeting): https://iopscience.iop.org/issue/1938-5862/109/4
- Proceedings of the 9th International SiGe, Ge, & Related Compounds: Materials, Processing, and Devices Symposium (ECS 2020 Fall Meeting): https://iopscience.iop.org/issue/1938-5862/98/5
- Proceedings of the 2nd joint ISTDM/ICSI conference (June 2-6, 2019, Madison, WI, USA), ECS Transactions 93 (1): https://iopscience.iop.org/issue/1938-5862/93/1
- Proceedings of the 1st joint ISTDM/ICSI conference (May 27 - 31,2018, Postdam, Germany): https://iopscience.iop.org/journal/0268-1242/page/special-issue-on-SiGe-materials
- Proceedings of the 8th International SiGe, Ge, & Related Compounds: Materials, Processing, and Devices Symposium (ECS 2018 Fall Meeting): https://iopscience.iop.org/issue/1938-5862/86/7
- Proceedings of the 10th Int. Conference on Si Epitaxy and Heterostructures, ICSI-10 (May 14-19, 2017, Warwick, UK): https://iopscience.iop.org/journal/0268-1242/page/Special-issue-on-Silicon-Epitaxy-and-Silicon-Heterostructures
Journal Papers (list is updated regularly, more publications behind the links of the institutes)
2022
Brandenburgische Technische Universität (BTU)
- I.A. Fischer et al., On-Chip Infrared Photonics with Si-Ge-Heterostructures: what is next?, APL Photonics 7, 050901 (2022)
- Y. Xie et al.,Tuning of Curie temperature in Mn5Ge3 films, Journal of Applied Physics 131 (10), 105102 (2022)
- Y. Xie et al., Influence of fabrication parameters on the magnetic and structural properties of Mn5Ge3, Semiconductor Science and Technology 37 (6), 065009 (2022)
- E. Hardt et al., Quantitative protein sensing with Germanium THz-antennas manufactured using CMOS processes, Optics Express 30, 40265 (2022)
- C. Alvarado Chavarin et al., Terahertz Subwavelength Sensing with Bio-Functionalized Germanium Fano-Resonators, Frequenz 70 (2022)
- F. Reichmann et al., Modification of the Ge(001) Subsurface Electronic Structure after Adsorption of Sn, Applied Surface Science 599,153844 (2022)
- F. Reichmann et al., New insights into the electronic states of the Ge(001) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation, Applied Surface Science 571, 151264 (2022)
- A. Peczek et al., Versatile Germanium Photodiodes with 3dB Bandwidths from 110 GHz to 265 GHz, ECS Trans. 109 (4) 21 (2022)
- C. Mai et al., Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology, ECS Trans. 109 (4) 35 (2022)
- Y. Yamamoto et al., High Quality Ge Growth on Si(111) and Si(110) by Using Reduced Pressure Chemical Vapor Deposition, ECS Trans. 109 (4) 205 (2022)
- K. Anand et al., Lateral-Selective SiGe Growth for Dislocation-Free Virtual Substrate Fabrication, ECS Trans. 109 (4) 269 (2022)
- W.-C. Wen et al.,3-Dimensional Self-Ordered Multilayered Ge Nanodots on SiGe, ECS Trans. 109 (4) 343 (2022)
- V. Depauw et al., Wafer-scale Ge epitaxial foils grown at high growth rates and released from porous substrates for triple-junction solar cells, Progress in Photovoltaix (2022)
- G. Rengo et al., B and Ga Co-Doped Si1-xGex for p-Type Source/Drain Contacts, ECS Journal of Solid State Science and Technology 11, 024008 (2022
- A. Veloso et al., Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails, IEEE TRANSACTIONS ON ELECTRON DEVICES
- E. Rosseel et al., Properties of Selectively Grown Si:P Layers below 500°C for Use in Stacked Nanosheet Devices, ECS Transactions, 109 (4) 93-98 (2022)
- G. Rengo et al., Low Temperature Epitaxy of In Situ GaDoped Si1-XGex: Dopant Incorporation, Structural and Electrical Properties, ECS Transactions, 109 (4) 249-259 (2022)
- R. Loo et al., Selective SiGe Vapor Etching Using Br2 in View of Nanosheet Device Isolation, ECS Transactions, 109 (4) 249-259 (2022)
- A. Veloso et al., Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails, 2022 IEEE Symposium on VLSI Technology and Circuits
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A. Vandooren et al.,, Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections, 2022 IEEE Symposium on VLSI Technology and Circuits
National Taiwan University
- Y.-R. Chen et al., ION Enhancement of Ge0.98Si0.02 Nanowire nFETs by High-k Dielectrics, IEEE Electron Device Letters 43 (10), pp. 1601-1604 (2022)
- Y.-J. Tsou et al., Demonstration of High Endurance and Retention Spin-Transfer-Torque-Assisted Field-Free Perpendicular Spin-Orbit Torque Cells by an Etch-Stop-on-MgO Process, IEEE Electron Device Letters 43 (10), pp. 1661-1664 (2022)
- C.-J. Tsen et al., Self-Heating Mitigation of TreeFETs by Interbridges, IEEE Transactions on Electron Devices 69 (8), pp. 4123-4128 (2022)
- C.-C. Chung et al., Self-Heating of FinFET Circuitry Simulated by Multi-Correlated Recurrent Neural Networks IEEE Electron Device Letters 43 (8), pp. 1179-1182 (2022)
- H.-C. Lin et al., RF Performance of Stacked Si Nanosheets/Nanowires, IEEE Electron Device Letters 43 (7), pp. 1017-1020 (2022)
- Y.-R. Chen et al., Multi-VT of Stacked GeSn Nanosheets by ALD WNxCy Work Function Metal, IEEE Transactions on Electron Devices. 69 (7), pp. 3611-3616 (2022)
- A. A. Shashkin et al., Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system, Scientific Reports, pp. 5080 (2022)
- Yun-Wen Chen and C. W. Liu, Boost of orthorhombic population with amorphous SiO2 interfacial layer – A DFT study, Semicond. Sci. Technol. 37 (5), pp. 05LT01, (2022)
- C.-T. Tu et al., Experimental Demonstration of TreeFETs Combining Stacked Nanosheets and Low Doping Interbridges by Epitaxy and Wet Etching, IEEE Electron Device Letters 43 (5), pp. 682-685 (2022)
- Bo-Wei Huang et al., Highly Stacked GeSn Nanosheets by CVD Epitaxy and Highly Selective Isotropic Dry Etching, IEEE Transactions on Electron Devices 69 (4), pp. 2130-2136 (2022)
- Chun-Hung Yeh et al., Electrical Measurements to Detect Liquid Concentration, IEEE Transactions on Semiconductor Manufacturing 35 (1), pp. 11-15 ( 2022)
- Chien-Te Tu et al., First Demonstration of Monolithic 3D Self-aligned GeSi Channel and Common Gate Complementary FETs by CVD Epitaxy Using Multiple P/N Junction Isolation, accepted by International Electron Devices Meeting (IEDM), 2022.
- Yi-Chun Liu et al., Highly Stacked Ge0.95Si0.05 Nanowire nFETs Featuring High ION=140μA (6500μA/μm) at VOV=VDS=0.5V by Low Temperature Epitaxy and Wet Etching, accepted by 53rd IEEE Semiconductor Interface Specialists Conference (SISC 2022)
- (invited) C. W. Liu et al., Stacked Nanosheet FETs and Beyond, 242nd ECS Meeting, Atlanta, GA, USA, October 9-13, 2022
- Chung-En Tsai et al., Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies, Symposium on VLSI Technology and Circuits (VLSI), JUNE 13-17, 2022
- Wan-Hsuan Hsieh et al., Recovery of Boron Activation and Epitaxial Breakdown in Heavily B-doped Ge Epilayers by In-situ CVD Doping, E-MRS Spring Meeting, May 30 – June 3, 2022
- Wan-Hsuan Hsieh et al., Diffusion and Segregation in Highly Stacked Ge0.9Sn0.1/Ge:B and Ge0.95Si0.05/Ge:P Epilayers, 241st ECS Meeting, Vancouver, BC, Canada, May 29 – June 2, 2022
- Chun-Yi Cheng et al., 6 Stacked Ge0.95Si0.05 nGAAFETs without Parasitic Channels by Wet Etching,2022 Int. Symp. on VLSI Technology, Systems and Application (VLSI-TSA), 2022
- Tao Chou et al., Cell Stability and Write Improvement of 2T (Footprint) Stacked SRAM, 2022 Int. Symp. on VLSI Technology, Systems and Application (VLSI-TSA), 2022
- Hsin-Cheng Lin et al., RF Performance Optimization of Stacked Si Nanosheet nFETs, 2022 Int. Symp.on VLSI Technology, Systems and Application (VLSI-TSA), 2022
Research Center Juelich - Peter Gruenberg Institute
- D. Buca et al., Room temperature lasing in GeSn microdisks enabled by strain engineering, Advanced Optical Materials in press (2022)
University of Technology Sydney (UTS)
- F. Iacopi and C.-T. Lin, A perspective on electroencephalography sensors for brain-computer interfaces, Progress in Biomedical Engineering 4 (4), 043002 (2022)
- S. N. Faisal and F. Iacopi, Thin-Film Electrodes Based on Two-Dimensional Nanomaterials for Neural Interfaces, ACS Appl. Nano Mater. 5 (8), 10137 (2022),
- I. Khodasevych et al., Designing concentric nanoparticles for surface-enhanced light-matter interaction in the mid-infrared, Optics Express 30 (13), 24118 (2022),
- David A Katzmarek et al., Review of graphene for the generation, manipulation, and detection of electromagnetic fields from microwave to terahertz, 2D Mater. 9 (2), 022002 (2022)
2021
AMO + R.W.T.H. Aachen (Center for Micro and Nanoelectronic Systems - MINAS)
- A. Quellmalz, et al., Large-area integration of two-dimensional materials and their heterostructures by wafer bonding, Nature Communications 12, 917 (2021).
Brandenburgische Technische Universität (BTU)
- J. Schlipf and I. Fischer, Rigorous coupled-wave analysis of a multi-layered plasmonic integrated refractive index sensor, Optics Express 29 (22), 36201-36210 (2021)
- F. Berkmann et al., Plasmonic gratings from highly doped Ge1− y Sn y films on Si, Journal of Physics D: Applied Physics 54 (44), 445109 (2021)
- L. Augel et al., Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes, Scientific reports 11 (1), 1-9 (2021)
- J. Schlipf et al., Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content, J Raman Spectrosc. 2021;1–9, (BTU, IHP, Roma Tre, HU Berlin, Uni-Stuttgart, Uni-Vigo)
- D. Weißhaupt et al., Weak localization and weak antilocalization in doped Ge1-ySny layers with up to 8%Sn, J. Phys.: Condens. Matter 33, 085703 (2021)
Eindhoven University of Technology (TUE)
- EMT Fadaly et al., Unveiling Planar Defects in Hexagonal Group IV Materials, Nano Lett. 21, 3619 (2021).
- S. Lischke, Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz, Nature Photonics (2021)
- H. Tetzner et al., Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si (001), Applied Physics Letters 119 (15), 153504 (2021)
- K. Noatschk et al., Ge(001) surface reconstruction with Sn impurities, Surface Science 713, 121912 (2021)
- R. Lukose et al., Influence of Plasma Treatment on SiO2/Si and Si3N4/Si Substrates for Large-Scale Transfer of Graphene, Scientific Reports 11, 13111 (2021).
- D. Spirito et al., Thermoelectric Efficiency of Epitaxial GeSn Alloys for Integrated Si-Based Applications: Assessing the Lattice Thermal Conductivity by Raman Thermometry, ACS Appl. Energy Mater.4 (7), 7385 (2021)
- Y. Yamamoto et al., Threading Dislocation Reduction of Ge by Introducing a SiGe/Ge Superlattice, ECS J. Solid State Sci. Technol. 10 (3), 034005 (2021)
- C.A. Chavarin, et al., N-type Ge/Si antennas for THz sensing, Optics Express 29 (5), 7680 (2021)
- P. Steglich et al., Silicon-Organic Hybrid Photonics: An Overview of Recent Advances, Electro-Optical Effects and CMOS-Integration Concepts, Journal of Physics: Photonics, 3(2), 022009 (2021)
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R. Sorge et al., JICG CMOS Transistors for Reduction of Total Ionizing Dose and Single Event Effects in a 130 nm Bulk SiGe BiCMOS Technology, Nuclear Instruments and Methods in Physics Research Section A 987, 164832 (2021),
- E.V. Lavrov et al., Interstitial H2 in 29Si., PHYSICAL REVIEW B 103, 205204 (2021)
- N. Horiguchi, Entering the Nanosheet Transistor Era ; Reviewing benefits and challenges of nanosheet device architectures for 3nm and beyond: nanosheet, forksheet, and CFET, EE Times 2021
- P Hoenicke et al.,Simultaneous Dimensional and Analytical CharacterizationSimultaneous Dimensional and Analytical Characterizationof Ordered Nanostructures, Small, p. 2105776 (2021)
- G. Rengo et al., Effect of Strain on the Epitaxy of B-Doped Si0.5Ge0.5 Source/Drain Layers, ECS Transactions, 104 (4) 167-179 (2021)
- A. Hikavyy et al., Cutting-Edge Epitaxial Processes for Sub 3 Nm Technology Nodes: Application to Nanosheet Stacks and Epitaxial Wrap-Around Contacts, ECS Transactions, 104 (4) 139-146 (2021)
- E. Simoen et al., Impact of Processing Factors on the Low-Frequency Noise of Gate-All-Around Silicon Vertical Nanowire FETs, ECS Transactions, 104 (4) 3-13 (2021)
- A. Vohra et al., Point defect formation near the epitaxial Ge(001) growth surface and the impact on phosphorus doping activation, Journal of Applied Physics 130, 125702 (2021). (Editors Pick's Article)
- A. Veloso et al., Enabling Logic with Backside Connectivity via n-TSVs and its Potential as a Scaling Booster, 2021 Symposium on VLSI Technology,
- H. Mertens et al., Forksheet FETs for Advanced CMOS Scaling: Forksheet-Nanosheet Co-Integration and Dual Work Function Metal Gates at 17nm N-P Space,2021 Symposium on VLSI Technology
- A. Vandooren et al., 3D sequential CMOS top tier devices demonstration using a low temperature Smart Cut™ Si layer transfer, 2021 Silicon Nanoelectronics Workshop (SNW)
- S. A. Srinivasan et al., 60Gb/s waveguide-coupled O-band GeSi quantum-confied Stark effect electro-absorption modulator, 2021 Optical Fiber Communications Conference and Exhibition (OFC), pp. 1-3. (2021)
- R. Kurstjens et al., GaInP solar cells grown on Ge-on-Ge engineered substrates, 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), p. 175 (2021)
- R. Loo et al., Epitaxial Ge-on-Nothing and Epitaxial Ge on Si-on-Nothing as Virtual Substrates for 3D Device Stacking Technologies, ECS Journal of Solid State Science and Technology 10 (8), 084003 (2021)
- H. Han et al., Crystalline defect analysis in epitaxial Si0.7Ge0.3 layer using site-specific ECCI-STEM, Micron 150, 103123 (2021)
- G. Eneman et al., Stress in Silicon-Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors, IEEE Trans. Electr. Dev. 68 (11), 5380 (2021)
- A. Veloso et al., Nanosheet FETs and their Potential for Enabling Continued Moore's Law Scaling, 5th IEEE Electr. Dev. Techn. & Manufact. Conf (EDTM), pp. 1-3 (2021)
- A. . Srinivasan et al., 56 Gb/s NRZ O-band Hybrid BiCMOS-Silicon Photonics Receiver using Ge/Si Avalance Photodiode, Journal of Lightwave Technology 39 (5), 1409 (2021)
- R. Loo et al., Epitaxial Growth of Active Si on top of SiGe Etch Stop Layer in View of 3D Device Integration, ECS J. Solid State Sci. Technol. 10 (1), 014001 (2021)
- K Yamamoto et al., Fabrication of Ge-on-Insulator By Epitaxial Growth and Ion-Implanted Exfoliation for Electronics and Opt-Electronics Applications, ECS transactions 104 (4), 157-166, (2021).
- K. Yamamoto et al., Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer, ECS transactions 102 (4), p. 63 (2021).
Nagoya University (see also here and here)
- S. Miyazaki et al., Impact of Boron Doping and H2 Annealing on Light Emission from Ge/Si Core-Shell Quantum Dots, ECS Transactions, 104 (4) 105-112 (2021)
- M. Kurosawa et al., Thermoelectric Properties of Tin-Incorporated Group-IV Thin Films, ECS Transactions, 104 (4) 183-189 (2021)
- H. Lai et al., Reinforcement of power factor in N-type multiphase thin film of Si1−x−yGexSny by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity, Appl. Phys. Lett. 119, 113903 (2021)
- S. Shibayama et al., "Impact of Wet Annealing on Ferroelectric Phase Formation and Phase Transition of HfO2−ZrO2 System", ACS Appl. Electron. Mater. 3, 2203-2211 (2021).
- O. Nakatsuka et al., "Formation and Characterization of Pseudomorphic Ge1−x−ySixSny/Ge Heterojunction Structures for Photovoltaic Application", ECS Trans. 102 (4), 3-9 (2021).
- T. Doi et al., "Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion", Jpn. J. Appl. Phys. 60 (7), 075503 (6 pages) (2021).
Nanyang Technological University - Nano Engineering Device Laboratory
- Y.-Y. Zhang et al., High Performance Flexible Visible-Blind Ultraviolet Photodetectors with Two-Dimensional Electron Gas Based on Unconventional Release Strategy, ACS Nano, In press (2021)
- S. An et al., High-Sensitivity and Mechanically Compliant Flexible Ge Photodetectors with a Vertical p–i–n Configuration, ACS Applied Electronic Materials, In press (2021)
- Y.-Y. Zhang et al., Anti-reflective porous Ge by open-circuit and lithography-free metal-assisted chemical etching, Applied Surface Science 546, 149083 (2021)
- Z. Qiao et al., Lasing action in microdroplets modulated by interfacial molecular forces, Advanced Photonics 3(1), 016003 (2021)
National Taiwan University
- D. Chen et al., Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure, Applied Physics Letters 119 (22), pp. 223103 (2021)
- Jih-Chao Chiu et al., Performance Improvement by Double-Layer a-IGZO TFTs with a Top Barrier, IEEE Journal of the Electron Devices Society 10, pp. 45-50 (2021)
- Ya-Jui Tsou et al., Thermally-Robust Perpendicular SOT-MTJ Memory Cells with STT-Assisted Field-Free Switching, IEEE Transactions on Electron Devices 68 (12), pp. 6623-6628 (2021)
- Yi-Chun Liu et al., Highly Stacked GeSi Nanosheets and Nanowires by Low-Temperature Epitaxy and Wet Etching, IEEE Transactions on Electron Devices 68 (12), pp. 6599-6604 (2021)
- Chia-Che Chung et al., Architecture and Optimization of 2T (Footprint) SRAM, IEEE Transactions on Electron Devices 68 (10), pp. 4918-4924 (2021)
- Hsin-Cheng Lin et al., RF Performance of Stacked Si Nanosheet nFETs, IEEE Transactions on Electron Devices 68 (10), pp. 5277-5283 (2021)
- V. T. Dolgopolov et al., Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system, Phys. Rev. B 103 (16), pp. 161302 (2021)
- (Highlight Paper) Yi-Chun Liu et al, First Highly Stacked Ge0.95Si0.05 nGAAFETs with Record ION = 110 uA (4100 uA/um) at VOV=VDS=0.5V and High Gm,max = 340 uS (13000uS/um) at VDS=0.5V by Wet Etching, Symposia on VLSI Technology and Circuits (VLSI), 2021
- Chung-En Tsai et al., First Demonstration of Multi-VT Stacked Ge0.87Sn0.13 Nanosheets by Dipole-Controlled ALD WNxCy Work Function Metal with Low Resistivity and Thermal Budget ≤ 400 °C, Symposia on VLSI Technology and Circuits (VLSI), 2021
- (Research Highlight) S. Thomas, Germanium nanowire transistors stack up, Nature Electronics 4, 452 (2021)
- Chien-Te Tu et al., Uniform 4-Stacked Ge0.9Sn0.1 Nanosheets Using Double Ge0.95Sn0.05 Caps by Highly Selective Isotropic Dry Etch, IEEE Transactions on Electron Devices 68 (4), 2071 (2021)
- (Invited) Yi-Chun Liu et al., Highly Stacked GeSi Nanosheets and Nanowires by Low Temperature Epitaxy and Wet Etching, submitted to IEEE Transactions on Electron Devices, (2021)
- Shih-Ya Lin et al., A High ION/IOFF Ratio of 5.3x102 in Ge85Sn0.15 n+/p Junctions by Phosphorus Ion Implantation and Microwave Annealing, 52nd IEEE SISC, San Diego, CA, December 8-11, 2021
- Wan-Hsuan Hsieh et al., Thermal Stability of Epitaxial GeSn Layers on Ge-buffered Si by CVD, 52nd IEEE SISC, San Diego, CA, December 8-11, 2021
- (Best Student Paper Award Chung-En Tsai et al., Highly Stacked 8 Ge0.9Sn0.1 Nanosheet pFETs with Ultrathin Bodies (~3nm) and Thick Bodies (~30nm) Featuring the Respective Record ION/IOFF of 1.4x107 and Record ION of 92μA at VOV=VDS= -0.5V by CVD Epitaxy and Dry Etching, pp. 569-572, IEDM, 2021
- (invited) Chien-Te Tu et al., GeSn/GeSi Stacked Channel Transistors, SSDM, Sept. 2021
- Wei-Jen Chen et al., Critical Current Reduction of Field-Free Perpendicular SOT-MTJ by STT Assist Using Micromagnetic Simulation, SISPAD, 2021
- (Highlight paper) Ya-Jui Tsou et al., First Demonstration of Interface-Enhanced SAF Enabling 400oC-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels, Symposia on VLSI Technology and Circuits (VLSI), 2021
- M. R. M. Atalla, All-group IV transferable membrane for room-temperature mid-infrared photodetectors (arXiv:2007.12239), Advanced Functional Materials 31 (3), 2006329 (2021),
QuTech (TU Delft)
- N. Hendrickx et al., A four-qubit germanium quantum processor, Nature 591, 580 (2021)
- Enrico Talamas Simola, CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes, ACS Photonics 8 (7), 2166 (2021)
- D. Stark et al., THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures, Applied Physics Letters 118, 101101 (2021)
- M. Montanari et al. Terahertz intersubband absorption in Ge/SiGe parabolic quantum wells, Applied Physics Letters, in press, (2021)
Shizuoka University
- Y. Shimura et al., Thermal conductivity and inelastic X-ray scattering measurements on SiGeSn polycrystalline alloy, Jpn. J. Appl. Phys. 60, SBBF11 (2021)
Tohoku University
- J. Murota and H. Ishii, Langmuir-Type Expressions for In-Situ Co-Doping of C with B or P in Si1-xGex Epitaxial Growth by Chemical Vapor Deposition, ECS J. of Solid State Sci. Technol. 10, 064004 (2021)
- J. Murota and H. Ishii, Langmuir-Type Mechanism for In-Situ Doping in CVD Si nd Si1-xGex Epitaxial Growth, ECS J. of Solid State Sci. Technol. 10, 024005 (2021)
University of Milano-Bicocca (UNIMIB) (see also Materials and Lassem)
- M. Agati et al., Growth of thick [111]-oriented 3C-SiC films on T-shaped Si micropillars, Materials & Design 208, 109833 (2021).
- R. Bergamaschini et al., Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting, Nanoscale 13, 9436 (2021).
- E. Scalise et al., Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires, Appl. Surf. Sci. 545, 148948 (2021).
- L. Barbisan et al., Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations, Phys. Status Sol. B 258, 2000598 (2021).
- M. Zimbone et al., Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries, Acta Mater. 213, 116915 (2021).
- A. Sarikov et al., Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations, CrystEngComm 23, 1566 (2021).
University of Technology Sydney (UTS)
- S. N. Faisal et al., Non-invasive on-skin sensors for brain machine interfaces with epitaxial graphene, J. Neural Eng. 18 (6), 066035 (2021)
- P. Rufangura et al., Enhanced Absorption with Graphene-Coated Silicon Carbide Nanowires for Mid-Infrared Nanophotonics, Nanomaterials 11, 2339 (2021).
2020
- J. Slotte et al., In Situ Positron Annihilation Spectroscopy Analysis on Low Temperature Irradiated Semiconductors, Challenges and Possibilities, physica status solidi A, 2000232 (2020)
- A. Khanam et al., A demonstration of donor passivation through direct formation of V-Asi complexes in As-doped Ge1−xSnx, J. Appl. Phys. 127, 195703 (2020)
AMO + R.W.T.H. Aachen (Center for Micro and Nanoelectronic Systems - MINAS)
- A. Gaho et al., Dependable Contact Related Parameter Extraction in Graphene-Metal Junctions, Adv. Electron. Mater.6 (10), 2000386 (2020)
- D. De Fazio et al., Graphene-Quantum Dot Hybrid Photodetectors with Low Dark-Current Readout, ACS Nano 14 (9), 11897 (2020)
- D. K. Polyushkin et al., Analogue Two-Dimensional Semiconductor Electronics, Nat. Electron. 3, 486 (2020)
- M. C. Lemme et al., NANOELECTROMECHANICAL SENSORS BASED ON SUSPENDED 2D MATERIALS, RESEARCH 2020, Article ID 8748602
- Y. Y. Illarionov et al., INSULATORS FOR 2D NANOELECTRONICS: THE GAP TO BRIDGE, Nat Commun 11, 3385 (2020)
- A. Manolis et al., ULTRA-SENSITIVE REFRACTIVE INDEX SENSOR USING CMOS PLASMONIC TRANSDUCERS ON SILICON PHOTONIC INTERFEROMETRIC PLATFORM, Opt. Express 28, 20992 (2020)
- S. Riazimehr et al., CAPACITANCE–VOLTAGE (C–V ) CHARACTERIZATION OF GRAPHENE–SILICON HETEROJUNCTION PHOTODIODES, Adv. Optical Mater. 8, 2000169 (2020),
- F. Driussi et al., DEPENDABILITY ASSESSMENT OF TRANSFER LENGTH METHOD TO EXTRACT THE METAL–GRAPHENE CONTACT RESISTANCE, IEEE Trans. Semicond. Manuf. 33, 210 (2020)
- S. Wittmann et al., DIELECTRIC SURFACE CHARGE ENGINEERING FOR ELECTROSTATIC DOPING OF GRAPHENE, ACS Appl. Electron. Mater. 2 (5), 1235 (2020)
- D. Fadil et al., A BROADBAND ACTIVE MICROWAVE MONOLITHICALLY INTEGRATED CIRCUIT BALUN IN GRAPHENE TECHNOLOGY, Appl. Sci. 10 (6), 2183 (2020)
- X. Fan et al., MANUFACTURE AND CHARACTERIZATION OF GRAPHENE MEMBRANES WITH SUSPENDED SILICON PROOF MASSES FOR MEMS AND NEMS APPLICATIONS, Microsyst. Nanoeng. 6, 17 (2020)
- M. Belete et al., ELECTRON TRANSPORT ACROSS VERTICAL SILICON/MOS2/GRAPHENE HETEROSTRUCTURES: TOWARDS EFFICIENT EMITTER DIODES FOR GRAPHENE BASE HOT ELECTRON TRANSISTORS, ACS Applied Materials + Interfaces 12 (8), 9656 (2020)
- T. Struck et al., Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe, npj Quantum Information 6, 40 (2020)
- A. Hollmann et al., Large, Tunable Valley Splitting and Single-Spin Relaxation Mechanisms in a Si/SxGe1-xQuantum Dot, Phys. Rev. Applied 13, 034068 (2020)
Brandenburgische Technische Universität (BTU)
- I.A. Fischer et al., Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells, Phys. Rev. Mat. 4, 2475-9953 (2020)
- L. Augel et al., Comparing Fourier transform infrared spectroscopy results with photocurrent measurements for Ge-on-Si PIN photodetectors with and without Al nanoantennas, Journal of Applied Physics 128, 013105 (2020)
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- J. M. Hartmann et al., Ultra-High Boron Doping of Si and Ge for Nanoelectronics and Photonics, ECS Transactions 98 (5), 203 (2020)
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- J.M. Hartmann and M. Veillerot, HCl + GeH4 etching for the low temperature cyclic deposition/etch of Si, Si:P, tensile-Si:P and SiGe(:B), Semiconductor Science and Technology 35, 015015 (2020)
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Eindhoven University of Technology (TUE)
- D. De Matteis et al., Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and SixGe1- xAlloys in Nanowires by Raman Spectroscopy, ACS Nano. 14 (6), p. 6845-6856 (2020)
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IMB-CNM-CSIC
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Nagoya University (see also here and here)
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Nanyang Technological University - Nano Engineering Device Laboratory
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National Taiwan University
- Yu-Shiang Huang et al., First Demonstration of Uniform 4-Stacked Ge9Sn0.1 Nanosheets with Record ION=73μA at VOV=VDS= -0.5V and Low Noise Using Double Ge0.95Sn0.05 Caps, Dry Etch, Low Channel Doping, and High S/D Doping, International Electron Devices Meeting (IEDM), pp. 23-26, 2020.
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- Fang-Liang Lu, Record Low Contact Resistivity to Ge:B (8.1x10-10Ω-cm2) and GeSn:B (4.1x10-10Ω-cm2) with Optimized [B] and [Sn] by In-situ CVD Doping, Symposia on VLSI Technology and Circuits (VLSI), 2020
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- (invited) C. W. Liu et al., Vertically Stacked High Mobility GeSi nGAAFETs, PRiME 2020 (ECS, ECSJ, & KECS Joint Meeting), Honolulu, Hawaii, Oct. 4-9, 2020
- (invited) C. W. Liu et al., Stacked high mobility channel transistors, China Semiconductor Technology International Conference (CSTIC) 2020, Shanghai, China (Virtual Conference), June 26 - July 17, 2020
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- S. Koelling et al., Probing semiconductor hetero-structures from the atomic to the micrometer scale, ECS Transactions 98 (5), 447 (2020),
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QuTech (TU Delft)
- F. van Riggelen et al., A two-dimensional array of single-hole quantum dots, arXiv:2008.11666
- M. Lodari et al., Low percolation density and charge noise with holes in germanium, arXiv:2007.06328
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Research Center Juelich - Peter Gruenberg Institute
- N. von den Driesch et al., Thermally activated diffusion and lattice relaxation in (Si)GeSn materials, Physical Review Materials 4, 033604 (2020).
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- C. Ciano et al., Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models, Photonics 7 (1), 2 (2020),
- T. Grange et al., Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering, Phys. Rev. Applied 13, 044062 (2020)
- L. Persichetti et. al., Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells, Crystals 10(3), 179 (2020)
Tohoku University
- W. Li et al., Electron-cyclotron resonance Ar plasma-induced electrical activation of B atoms without substrate heating in B doped Si epitaxial films on Si(100), Material Science in Semiconductor Processing 107, 104823 (2020)
University of Milano-Bicocca (UNIMIB) (see also Materials and Lassem)
- L. Becker et al., Controlling the relaxation mechanism of low strain Si1-xGex/Si(001) layers and reducing the threading dislocation density by proving a preexisting dislocation source, J. Appl. Phys. 128, 215305 (2020)
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- E. Scalise et al., The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach, J. Mat. Chem. C 8, 8380 (2020),
- A. Barzaghi et al., Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates, Cryst. Growth. & Des. 20, 2914 (2020)
- S. Assali et al., Kinetic Control of Morphology and Composition in Ge/GeSn Core-Shell Nanowires, ACS Nano 14, 2445 (2020),
- A. Sarikov et al., Molecular dynamics simulations of extended defecs and their evolution in 3C-SiC by different potentials, Modelling and Simulation in Mat. Sci. & Engin. 28, 015002 (2020)
- E. Vitiello et al., Continuous-wave magneto-optical determination of the carrier lifetime in coherent Ge(1-x)Sn(x)/Ge heterostructures, Physical Review Applied 14, 064068 (2020)
- J. Pedrini et al., Broadband control of the optical properties of semiconductors through site-controlled self-assembly of microcrystals, Optics express, 28, 24981 (2020),
2019
CEA-LETI
- M. Mastari et al., SiGe nano-heteroepitaxy: An investigation of the nano-template, Journal of Crystal Growth 527, 125232 (2019). https://doi.org/10.1016/j.jcrysgro.2019.125232
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- S. Barraud et al., Top-down fabrication and electrical characterization of Si and SiGe nanowires for advanced CMOS technologies, Semiconductor Science and Technology 34, 074001 (2019). https://iopscience.iop.org/article/10.1088/1361-6641/ab1e5b
- D. Benedikovic et al., 25 Gbps low-voltage hetero-structured silicon-germanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures, Photonics Research 7, 437 (2019). https://doi.org/10.1364/PRJ.7.000437
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- P.E. Raynal et al., GeSn surface preparation by wet cleaning and in-situ plasma treatments prior to metallization, Microelectronic Engineering 203–204, 38 (2019). https://doi.org/10.1016/j.mee.2018.11.005
- M. Mastari et al., Nano-Heteroepitaxy: An Investigation of SiGe Pillars Coalescence, ECS J. Solid State Sci. Technol. 8, P180 (2019). http://jss.ecsdl.org/content/8/3/P180
- L. Dagault et al.,, Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers, ECS J. Solid State Sci. Technol. 8, P202 (2019). http://jss.ecsdl.org/content/8/3/P202
CINTECX (University of VIGO)
- M. C. J.Weiser et al., Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy, IEEE Proceedings MIPRO (2019) 1-6, DOI: 10.23919/MIPRO.2019.8756640, ISSN: 2623-8764, https://ieeexplore.ieee.org/document/8756640
- J. Schlipf et al., Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy, J. Vac. Sci. Technol. B 37, 2166-2754 (2019), https://avs.scitation.org/doi/10.1116/1.5122777 (Uni-Vigo, Uni-Stuttgart, BTU, Horiba)
Eindhoven University of Technology (TUE)
- S. Assali et al., Strain engineering in Ge/GeSn core/shell nanowires, APPLIED PHYSICS LETTERS. 115 (11), 113102 (2019), https://aip.scitation.org/doi/10.1063/1.5111872
- Y. Ren et al., Hexagonal silicon grown from higher order silanes, NANOTECHNOLOGY 30 (29), 295602 (2019), https://iopscience.iop.org/article/10.1088/1361-6528/ab0d46
- J. Ridderbos et al., Hard Superconducting Gap and Diffusion-Induced Superconductors in Ge-Si Nanowires, NANO LETTERS 20 (1), 122-130 (2019) , https://pubs.acs.org/doi/10.1021/acs.nanolett.9b03438
- J. Ridderbos et al., Multiple Andreev reflections and Shapiro steps in a Ge-Si nanowire Josephson junction, PHYSICAL REVIEW MATERIALS 3 (8), 084803 (2019), https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.3.084803
HZDR
- S. Prucnal et al., Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing, Journal of Applied Physics 125, 203115 (2019)
- S. Prucnal et al., Nanoscale n++-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy, Journal of Applied Physics 125, 245703 (2019)
- S. Prucnal et al., Superconductivity in single-crystalline aluminum- and gallium-hyperdoped germanium, Phys. Rev. Materials 3, 054802 (2019) | arXiv:1904.06865
- M. Wang et al., Breaking the doping limit in silicon by deep impurities, Phys. Rev. Applied 11, 054039 (2019) | arXiv:1809.06055
- M. Wang et al., Thermal stability of Te-hyperdoped Si: Atomic-scale correlation of the structural, electrical, and optical properties, Physical Review Materials 3, 044606 (2019) | arXiv:1901.01084
IHP
- F. Bärwolf et al., Dynamic SIMS, spectroscopic ellipsometry and x-ray diffractometry analysis of SiGe HBTs with Ge grading, Semicond. Sci. Technol. 34 (2019) 014005, https://iopscience.iop.org/article/10.1088/1361-6641/aaf3e2\
- Y. Yamamoto et al., Self-Ordered Ge Nanodot Fabrication by using Reduced Pressure Chemical Vapor Deposition, ECS Journal of Solid State Science and Technology, 8 (3) P190 (2019), http://jss.ecsdl.org/content/8/3/P190.full?sid=22eef9a6-fb16-4047-a61b-40eddd174543
- J. Allerbeck et al., Ultrafast carrier recombination in highly n-doped Ge-on-Si films. Applied Physics Letters 114, 241104 (2019) https://aip.scitation.org/doi/full/10.1063/1.5088012
IMB-CNM-CSIC
- M. Cabello, et al., Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs, Materials Science in Semiconductor Processing 93, 357-359 (2019), https://www.sciencedirect.com/science/article/pii/S1369800118319309
- E. Masvidal-Codina, et al., High-resolution mapping of infraslow cortical brain activity enabled by graphene microtransistors, Nature Materials 18, 280-299 (2019), https://www.nature.com/articles/s41563-018-0249-4
- V. Banu, M. Popescu, P. Godignon, Delta Reference, the Latest High Temperature Compensated Voltage Reference Concept, European Space Power Conference (ESPC) Juan-les-Pins, FRANCE SEP 30-OCT 04, 2019
- P. Eyben et al., 3D-carrier Profiling and Parasitic Resistance Analysis in Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors, IEDM-2019, pp. 11.3.1-11.3.4, doi: 10.1109/IEDM19573.2019.8993636, https://ieeexplore.ieee.org/document/8993636
- H. Arimura et al., Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si, IEDM-2019 pp. 29.2.1-29.2.4, doi: 10.1109/IEDM19573.2019.8993467, https://ieeexplore.ieee.org/abstract/document/8993467
- A. Veloso et al., Vertical Nanowire and Nanosheet FETs: Device Features, Novel Schemes for Improved Process Control and Enhanced Mobility, Potential for Faster & More Energy Efficient Circuits, IEDM-2019, pp. 11.1.1-11.1.4, doi: 10.1109/IEDM19573.2019.8993602, https://ieeexplore.ieee.org/document/8993602
- H. Arimura et al., A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation, 2019 Symposium on VLSI Technology, p. T92, doi: 10.23919/VLSIT.2019.8776535, https://ieeexplore.ieee.org/document/8776535
- E. Capogreco et al.,, High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-Jtlnm LG, 2019 Symposium on VLSI Technology, p. T94, doi: 10.23919/VLSIT.2019.8776558, https://ieeexplore.ieee.org/abstract/document/8776558
- A. Vandooren et al., Buried metal line compatible with 3D sequential integration for top tier planar devices dynamic Vth tuning and RF shielding applications, 2019 Symposium on VLSI Technology, p. T56, doi: 10.23919/VLSIT.2019.8776490, https://ieeexplore.ieee.org/document/8776490
- H. Arimura et al. Record GmSAT/SSSAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation, IEEE Transactions on Electron Devices 66 (12), 5387 (2019), https://ieeexplore.ieee.org/document/8897623
- P. Favia et al., TEM investigations of Gate-All-Around Nanowire Devices, IOP Semiconductor Science and Technology 34 (12), P.124003 (2019), https://iopscience.iop.org/article/10.1088/1361-6641/ab4b8b
- A. Vohra et al., Heavily phosphorus doped germanium: strong relationship of phosphorus with vacancies and impact of Sn alloying on doping activation, Journal of Applied Physics 125 (22), 225703 (2019), https://aip.scitation.org/doi/full/10.1063/1.5107503 (Editors Pick's Article)
- A. Vohra et al., Evolution of phosphorus-vacancy clusters in germanium, Journal of Applied Physics 125 (2), 025701 (2019), https://aip.scitation.org/doi/10.1063/1.5054996
- C. Porret et al., Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration: ECS Journal of Solid State Science and Technology 8 (8), P392 (2019), http://jss.ecsdl.org/content/8/8/P392.full.pdf+html?sid=92c0d2ea-3527-4ae1-895c-44904fc02a9
- A. Vohra et al., Low temperature Ge:B and GeSn:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide & nitride with no need for any post-epi activation treatment, Japanese Journal of Applied Physics 58, SBBA04-1 (2019), https://iopscience.iop.org/article/10.7567/1347-4065/ab027b/meta (Spotlights 2019 + listed as Highlighs of 2019)
- A. Hikavyy et al., Application of Cl2 for low temperature etch and epitaxy, Semiconductor Science and Technology 34 (7), 074003 (2019), https://iopscience.iop.org/article/10.1088/1361-6641/aafc93
- S. Dhayalan et al., Insights into the C distribution in Si:C/Si:C:P and the annealing behavior of Si:C layers, ECS Journal of Solid State Science and Technology 8 (4), P209 (2019), http://jss.ecsdl.org/content/8/4/P209.full.pdf+html?sid=92c0d2ea-3527-4ae1-895c-44904fc02a94
Kyushu Universiy
- K. Yamamoto et al., Conduction Type Control of Ge-on-Insulator: Combination of Smart-CutTM and Defect Elimination, ECS transactions 93 (1), p. 73(2019) https://dx.doi.org/10.1149/09301.0073ecst
- K. Moto et al., Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass, Appl. Phys. Lett. 114, p. 212107 (2019), https://doi.org/10.1063/1.5093952
- K. Yamamoto et al., Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation, Jpn. J. Appl. Phys. 58, p. SBBA14 (2019), https://doi.org/10.7567/1347-4065/ab02e3
- T. Maekura et al., Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate, Jpn. J. Appl. Phys., 58, p. SBBE05 (2019), https://doi.org/10.7567/1347-4065/aafb5e
Nagoya University
- S. Miyazaki et al., Photoemission-based Characterization of Gate Dielectrics and Stack Interfaces, ECS Transactions 92 (4) 11 (2019), https://iopscience.iop.org/article/10.1149/09204.0011ecst
- S.Fujimori et al, Effect of H2-dilution in Si-cap formation on photoluminescence intensity of Si quantum dots with Ge core, Japanese Journal of Applied Physics 58 SIIA01 (2019), https://doi.org/10.7567/1347-4065/ab0c7a
- S. Miyazaki et al., Photoemission Characterization of Interface Dipoles and Electronic Defect States for Gate Dielectrics, ECS Transactions 90 (1) 113 (2019), https://doi.org/10.1149/09001.0113ecst
- M. Kurosawa et al., Synthesis of heavily Ga-doped Si1−xSnx/Si heterostructures and their valence-band-offset determination, Japanese Journal of Applied Physics. 58, SAAD02 (4 pages) (2019), https://doi.org/10.7567/1347-4065/aaeb36
- Y. Miki et al., Influence of Sn precursors on Ge1−xSnx growth using metal-organic chemical vapor deposition, Japanese Journal of Applied Physics 58, SAAD07 (7 pages) (2019), https://doi.org/10.7567/1347-4065/aaec1a
- K. Takahashi et al., Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process, Applied Physics Express 12 (5), 051016 (5 pages) (2019), https://doi.org/10.7567/1882-0786/ab1969
- M. Fukuda et al., Formation and Optoelectronic Property of Strain-relaxed Ge1−x–ySixSny/Ge1−xSnx/Ge1−x–ySixSny Double Heterostructures on Boron-Ion-Implanted Ge(001) Substrate, Japanese Journal of Applied Physics 58, SIIB23 (2019), https://doi.org/10.7567/1347-4065/ab1b62
- Y. Peng et al., Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation, Scientific Reports 9, 14342 (9 pages) (2019), https://doi.org/10.1038/s41598-019-50754-4
Nanyang Technological University - Nano Engineering Device Laboratory
- J. D. Kim et al., CMOS Compatible Catalyst for MacEtch: Titanium Nitride Assisted Chemical Etching in Vapor Phase for High Aspect Ratio Silicon Nanostructures, ACS Applied Materials & Interfaces, 11(30), 27371 (2019)
- H.-C. Huang et al., High Aspect Ratio β-Ga2O3 Fin Arrays with Low Interface Charge Density by Inverse Metal-Assisted Chemical Etching, ACS Nano, 13(8), 8784 (2019). This article has been highlighted in Science Daily, Laser Focus World, Phys.Org, and more.
- S. J. Cho et al., P-type silicon as hole supplier for nitride-based UVC LEDs, New Journal of Physics, 21(2), 023011 (2019)
- M. Kim et al., Flexible Photodetectors with Nanomembranes and Nanowires, Wiley‐VCH Verlag GmbH & Co. KGaA (2019). (book chapter)
National Taiwan University
- Yu-Shiang Huang et al., First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=40nm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise, p. 689, International Electron Devices Meeting (IEDM), 2019.
- Chien-Te Tu et al., First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μA at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V, p. 681, International Electron Devices Meeting (IEDM), 2019.
- Min-Hung Lee et al., Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs, p. 566, International Electron Devices Meeting (IEDM), 2019.
- Yu-Shiang Huang et al., First Vertically Stacked, Compressively Strained, and Triangular Ge0.91Sn0.09 pGAAFETs with High ION of 19.3μA at VOV=VDS=-0.5V, Gm of 50.2μS at VDS=-0.5V and Low SSlin of 84mV/dec by CVD Epitaxy and Orientation Dependent Etching, Symposia on VLSI Technology and Circuits (VLSI), pp. 180-181, 2019.
- Fang-Liang Lu et al., Record Low Contact Resistivity (4.4x10-10Ω-cm2) to Ge Using In-situ B and Sn Incorporation by CVD with Low Thermal Budget (≤400℃) and Without Ga, Symposia on VLSI Technology and Circuits (VLSI), pp. 178-179 2019
- Yu-Shiang Huang et al., Novel Vertically-Stacked Tensily-Strained Ge0.85Si0.15 GAA n-Channels on a Si Channel with SS=76mV/dec, DIBL=36mV/V, and Ion/Ioff=1.2E7, 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, April 22-25, 2019.
POLYTECHNIQUE MONTREAL
- S. Assali et al., Vacancy complexes in nonequilibrium germanium-tin semiconductors, Applied Physics Letters 114, 251907 (2019), DOI: https://doi.org/10.1063/1.5108878
- M. Fortin-Deschênes et al., Dynamics of Antimonene-Graphene van der Waals Growth, Advanced Materials 31, 1900569 (2019), DOI: https://doi.org/10.1002/adma.201900569
- R. M. Jacobberger et al., Alignment of semiconducting graphene nanoribbons on vicinal Ge(001), Nanoscale 14, 4864 (2019), DOI: https://doi.org/10.1039/C9NR00713J
- S. Assali et al., Enhanced Sn incorporation in GeSn epitaxial layers via strain relaxation, Journal of Applied Physics 125, 025304 (2019), DOI: https://doi.org/10.1063/1.5050273
QuTech (TU Delft)
- M. Lodari et al., Light effective hole mass in undoped Ge/SiGe quantum wells.
Physical Review 100, 041304(R) (2019), https://journals.aps.org/prb/abstract/10.1103/PhysRevB.100.041304 - D. Sabbagh et al., Quantum Transport Properties of Industrial 28Si/28SiO₂.
Physical Review Applied 12, 014013 (2019), https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.12.014013 - G. Zheng et al., Rapid gate-based spin read-out in silicon using an on-chip resonator.
Nature Nanotechnology 14, 742 (2019), https://doi.org/10.1038/s41565-019-0488-9 - N.W. Hendrickx et al., Ballistic supercurrent discretization and micrometer-long Josephson coupling in germanium, Physical Review B 99, 075435 (2019), https://journals.aps.org/prb/abstract/10.1103/PhysRevB.99.075435
- F. Vigneau et al., Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers, Nano Letters 19, 1023 (2019), https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.8b04275
- A. Sammak et al., Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology, Advanced Functional Materials 29, 1807613 (2019), https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201807613
- R. Pillarisetty et al., Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology, Technical Digest-International Electron Devices Meeting, IEDM (2019), https://ieeexplore.ieee.org/abstract/document/8614624/
Research Center Juelich - Peter Gruenberg Institute
- N. von den Driesch et al., Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters, Solid State Electronics 155, 139 (2019) https://dx.doi.org/10.1016/j.sse.2019.03.013
- D. Rainko et al., Impact of tensile strain on low Sn content GeSn lasing, Scientific Reports 9 (1), 259 (2019), https://dx.doi.org/10.1038/s41598-018-36837-8
Roma Tre
- C. Ciano et. al., n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser. ECS Transactions 93, 63 (2019) http://ecst.ecsdl.org/content/93/1/63
- T. Grange et. al., Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions. Applied Physics Letters 114, 111102 (2019) https://aip.scitation.org/doi/10.1063/1.5082172
- C. Ciano et. al., Control of Electron State Coupling in Asymmetric Ge/GeSi Quantum Wells., Physical Review Applied 11, 014003 (2019) https://doi.org/10.1103/PhysRevApplied.11.014003
- L. Persichetti et al., Abrupt changes in the graphene on Ge(001) system at the onset of surface melting, Carbon 145, 345 (2019) https://www.sciencedirect.com/science/article/pii/S0008622319300430
University of Milano-Bicocca (UNIMIB)
- F. Rovaris et al., Dynamics of crosshatch patterns in heteroepitaxy, Phys. Rev. B 100, 085307 (2019), https://doi.org/10.1103/PhysRevB.100.085307
- E. Scalise et al., Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments, Phys. Rev. Appl. 12, 021002 (2019). https://doi.org/10.1103/PhysRevApplied.12.021002
- M. Albani et al., Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling, Phys. Stat. Sol. B 256, 1800518 (2019). https://doi.org/10.1002/pssb.201800518
-
S. De Cesari et al., Spin-coherent dynamics and carrier lifetime in strained Ge1-xSnx semiconductors on silicon. Physical Review B 99, 035202 (2019), https://journals.aps.org/prb/abstract/10.1103/PhysRevB.99.035202
2018
CEA-LETI
- R. Khazaka et al., Growth and characterization of SiGeSn pseudomorphic layers on 200 mm Ge virtual substrates, Semiconductor Science and Technology 33, 124011 (2018). https://iopscience.iop.org/article/10.1088/1361-6641/aaea32
- V. Boureau et al., Lattice contraction due to boron doping in silicon, Materials Science in Semiconductor Processing 87, 65 (2018). https://doi.org/10.1016/j.mssp.2018.07.011
- Quang Minh Thai et al., GeSn heterostructure micro-disk laser operating at 230 K, Optics Express 26, 32500 (2018). https://doi.org/10.1364/OE.26.032500
- J.M. Hartmann, Impact of Si precursor mixing on the low temperature growth kinetics of Si and SiGe, Semiconductor Science and Technology 33, 104002 (2018). https://iopscience.iop.org/article/10.1088/1361-6641/aad8d2/pdf
- A. Quintero et al., Impact of Pt on the phase formation sequence, morphology, and electrical properties of Ni(Pt)/Ge0.9Sn0.1 system during solid-state reaction, Journal of Applied Physics 124, 085305 (2018). https://doi.org/10.1063/1.5040924
- M. Mastari et al., SiGe nano-heteroepitaxy on Si and SiGe nano-pillars, Nanotechnology 29, 275702 (2018). https://iopscience.iop.org/article/10.1088/1361-6528/aabdca/pdf
- J.M. Hartmann and J. Aubin, Assessment of the growth/etch back technique for the production of Ge strain-relaxed buffers on Si, Journal of Crystal Growth 488, 43 (2018). https://doi.org/10.1016/j.jcrysgro.2018.02.036
- P.E. Raynal et al., Wet and Siconi® cleaning sequences for SiGe p-type metal oxide semiconductor channels, Microelectronic Engineering 187–188, 84 (2018). https://doi.org/10.1016/j.mee.2017.12.003
- C. Bellegarde et al., Improvement of Sidewall Roughness of Submicron SOI Waveguides by Hydrogen Plasma and Annealing, IEEE Photonics Technology Letters 30, 591 (2018). https://doi.org/10.1109/LPT.2018.2791631
- M. Sinobad et al., Mid-infrared octave spanning supercontinuum generation to 8.5 μm in silicon-germanium waveguides, Optica 5, 360 (2018). https://doi.org/10.1364/OPTICA.5.000360
- J.M. Fedeli et al., Mid-InfraRed platforms for chemical sensing, 2018 IEEE 15th International Conference on Group IV Photonics (GFP), p. 135. https://ieeexplore.ieee.org/document/8478756
- J. Aubin and J.M. Hartmann, GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4, Journal of Crystal Growth 482, 30 (2018). https://doi.org/10.1016/j.jcrysgro.2017.10.030
- J.M. Hartmann et al., A Benchmark of 300mm RP-CVD Chambers for the Low Temperature Epitaxy of Si and SiGe, ECS Transactions 86 (7), 219 (2018). http://ecst.ecsdl.org/content/86/7/219
- R. Khazaka et al., Investigation of the Growth of Si-Ge-Sn Pseudomorphic Layers on 200 mm Ge Virtual Substrates: Impact of Growth Pressure, HCl and Si2H6 Flows, ECS Transactions 86 (7), 207 (2018). http://ecst.ecsdl.org/content/86/7/207
- V. Mazzocchi et al., Benchmark of Disilane and Liquid Si for the Low Temperature Epitaxial Growth of Si, SiGe and SiGeB, ECS Transactions 86 (7), 177 (2018). http://ecst.ecsdl.org/content/86/7/177
Eindhoven University of Technology (TUE)
- M. Albani et al., Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires, NANOSCALE 10 (15), 7250-7256 (2018), https://pubs.rsc.org/en/content/articlelanding/2018/nr/c7nr09568f#!divAbstract
- J. Ridderbos et al., Josephson Effect in a Few-Hole Quantum Dot, ADVANCED MATERIALS 30 (44), 1802257 (2018), https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201802257
- F. de Vries et al., Spin-Orbit Interaction and Induced Superconductivity in a One-Dimensional Hole Gas, NANO LETTERS 18 (10), 6483-6488 (2018), https://pubs.acs.org/doi/10.1021/acs.nanolett.8b02981
- F. Froning et al., Single, double, and triple quantum dots in Ge/Si nanowires, APPLIED PHYSICS LETTERS 113 (7), 073102 (2018), https://aip.scitation.org/doi/10.1063/1.5042501
HZDR
- S. Prucnal et al., Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping, Phys. Rev. Applied 10, 064055 (2018) | arXiv:1901.01721
- M. Wang et al., Extended Infrared Photoresponse in Te-Hyperdoped Si at Room Temperature, Physical Review Applied 10, 024054 (2018) | arXiv:1809.00983
IHP
- D. Wolansky et al., Impact of nickel silicide on SiGe BiCMOS devices, Semicond. Sci. and Technol. 33 124003 (2018), https://iopscience.iop.org/article/10.1088/1361-6641/aae612
- Y. Yamamoto et al., Influence of annealing conditions on threading dislocation density in Ge deposited on Si by reduced pressure chemical vapor deposition, Semicond. Sci. and Technol. 33 124007 (2018), https://iopscience.iop.org/article/10.1088/1361-6641/aae574
- Y. Yamamoto et al., Alignment control of self-ordered three dimensional SiGe nanodots, Semicond. Sci. and Technol. 33 114014 (2018), https://iopscience.iop.org/article/10.1088/1361-6641/aae62d
- H. Rücker et al., High-performance SiGe HBTs for next generation BiCMOS technology Semicond. Sci. and Technol. 33 114003 (2018), https://iopscience.iop.org/article/10.1088/1361-6641/aade64
- V. Schlykow, Photoluminescence from GeSn nano-heterostructures, Nanotechnology 29 415702 (2018), https://iopscience.iop.org/article/10.1088/1361-6528/aad626
- C. Baristiran Kaynak et al., High Performance Thermistor Based on Si1−xGex/Si Multi Quantum Wells, IEEE Electron Device Letters 39 (5) 753 (2018), https://ieeexplore.ieee.org/document/8329244
- P. Zaumseil et al., The thermal stability of epitaxial GeSn layers, Applied Physics Letters Materials 6, 076108 (2018) https://aip.scitation.org/doi/10.1063/1.5036728
- M. Bettenhausen et al., Germanium Plasmon Enhanced Resonators for Label-Free Terahertz Protein Sensing. Frequenz 72, 113 (2018) https://www.degruyter.com/view/j/freq.2018.72.issue-3-4/freq-2018-0009/freq-2018-0009.xml
- M. Salvalaglio et al., Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instability, Applied Physics Letters 112, 022101 (2018) https://aip.scitation.org/doi/full/10.1063/1.5007937
IMB-CNM-CSIC
- V. Soler et al., Complementary p-Channel and n-Channel SiC MOSFETs for CMOS Integration, Material Science Forum 924, pp.975-979 (2018)
- O. Loto, et al., Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors, IEEE Transactions on Electron Devices 65, 3361-3364 (2018), https://ieeexplore.ieee.org/document/8399540
- M. Cabello, et al., Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review, Materials Science in Semiconductor Processing 78, 22-31 (2018), https://www.sciencedirect.com/science/article/pii/S1369800117318978
- F. Roccaforte and P. Godignon, Wide band gap semiconductors technology for next generation of energy efficient power electronics, Editorial of Special Issue Materials Science in Semiconductor Processing 78, 1-1 (2018), https://www.sciencedirect.com/science/article/pii/S136980011830101X
- C. Hebert, et al., Flexible Graphene Solution-Gated Field-Effect Transistors: Efficient Transducers for Micro-Electrocorticography, Advanced Functional Materials 28, 1703976, (2018), https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.201703976
- J.M. Rafí, et al., Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: electrical characterization and electron irradiation effects, Journal of Instrumentation 13, C01045, (2018), https://iopscience.iop.org/article/10.1088/1748-0221/13/01/C01045
Imec
- R. Loo et al., Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures, ECS Journal of Solid State Science and Technology 7 (2), P6 (2018), http://jss.ecsdl.org/content/7/2/P66.full.pdf+html?sid=92c0d2ea-3527-4ae1-895c-44904fc02a94
- E. Capogreco et al., First demonstration of vertically stacked gate-all-around highly strained germanium nanowire pFETs, IEEE Transactions on Electron Devices 65 (11), 5145 (2018), https://ieeexplore.ieee.org/document/8489968
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- S. Gupta et al., Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si, Applied Physics Letters 113 (19), 192103 (2018), https://doi.org/10.1063/1.5048683
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- S. Dhayalan et al., On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si:P Epitaxial Films for Source-Drain Stressor Applications, ECS Journal of Solid State Science and Technology 7 (5), P228 (2018), http://jss.ecsdl.org/content/7/5/P228.full.pdf+html?sid=92c0d2ea-3527-4ae1-895c-44904fc02a94
Kyushu University
- W.-C. Wen et al., Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy J. Appl. Phys., 124, (20), p. 205303 (2018), https://doi.org/10.1063/1.5055291
- K. Yamamoto et al., Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition, Semiconductor Science and Technology, 33, p. 114011 (2018), https://doi.org/10.1088/1361-6641/aae4bd
Nagoya University
- R. Nagai et al., Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core, Semiconductor Science and Technology 33 124021 (2018), https://doi.org/10.1088/1361-6641/aaebbc
- Y. Futamura et al., Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy, Japanese Journal of Applied Physics 58 SAAE01 (2018), https://doi.org/10.7567/1347-4065/aaeb38
- H. Zhang et al., High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots, ECS Transactions 86 (7), 131 (2018), doi:10.1149/08607.0131ecst
- Y. Wen et al., Formation of Mn-germanide nanodots on ultrathin SiO2 induced by remote hydrogen plasma, Japanese Journal of Applied Physics 57 01AF05 (2018), https://doi.org/10.7567/JJAP.57.01AF05
- K. Ito et al., Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient, Japanese Journal of Applied Physics 57 06HD08 (2018), https://doi.org/10.7567/JJAP.57.06HD08
- K. Ito et al., Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si+Ge) compositions, Japanese Journal of Applied Physics 57, 04FJ05 (2018), https://iopscience.iop.org/article/10.7567/JJAP.57.04FJ05
- K. Makihara et al., Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection, Applied Physics Express 11, 011305 (2018), https://doi.org/10.7567/APEX.11.011305
- S. Ike et al., Epitaxial growth of heavily doped n+-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping, Thin Solid films 645 (1), 57-63 (2018), https://doi.org/10.1016/j.tsf.2017.10.013
- W. Takeuchi et al., Selective growth of Ge1-xSnx epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition, Japanese Journal of Applied Physics 57 (1S), 01AC05 (5 pages) (2018), https://doi.org/10.7567/JJAP.57.01AC05
- K. Takahashi et al., High n-type Sb dopant activation in Ge-rich poly-Ge1−xSnx layers on SiO2 using pulsed laser annealing in flowing water, Applied Physics Letters 112, 062104 (4 pages) (2018), https://doi.org/10.1063/1.4997369
- K. Takahashi et al., Dopant behavior in heavily doped polycrystalline Ge1−xSnx layers prepared with pulsed laser annealing in water, Japanese Journal of Applied Physics 57 (4S), 04FJ02 (6 pages) (2018), https://doi.org/10.7567/JJAP.57.04FJ02
- A. Suzuki et al., Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched SixGe1−x−ySny ternary alloy interlayer on Ge, Japanese Journal of Applied Physics 57 (6), 07MA05 (5 pages) (2018), https://doi.org/10.7567/JJAP.57.060304
- O. Nakatsuka et al., Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties, Japanese Journal of Applied Physics 57 (7S2), 060304 (4 pages) (2018), https://doi.org/10.7567/JJAP.57.07MA05
- J. Jeon et al., Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n+-Ge1−xSnx structure, Semiconductor Science and Technology 33 (12), 124001 (2018), https://doi.org/10.1088/1361-6641/aae624
- M. Fukuda et al., Optoelectronic properties of high-Si-content-Ge1−x–ySixSny/Ge1−xSnx/Ge1−x–ySixSny double heterostructure, Semiconductor Science and Technology 33 (12), 124018 (8 pages) (2018), https://doi.org/10.1088/1361-6641/aaebb5
- J. Jeon et al., Growth and electrical properties of in situ Sb-doped Ge1−xSnx epitaxial layers for source/drain stressor of strained-Ge transistors, Japanese Journal of Applied Physics 57 (12), 121303 (6 pages) (2018), https://doi.org/10.7567/JJAP.57.121303
Nanyang Technological University - Nano Engineering Device Laboratory
- M. Kim et al., Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity, Applied Physics Letters 113, 222104 (2018)
- D. Liu et al., 226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection, Applied Physics Letters 113, 011111 (2018)
- M. Kim et al., Enhanced Performance of Ge Photodiodes via Monolithic Antireflection Texturing and α-Ge Self-Passivation by Inverse Metal-Assisted Chemical Etching, ACS Nano, 12(7), 6748 (2018)
- J. D. Kim et al., Self-Anchored Catalyst Interface Enables Ordered Via Array Formation from Submicrometer to Millimeter Scale For Polycrystalline and Single-Crystalline Silicon, ACS Applied Materials & Interfaces 10(10), pp. 9116-9122 (2018)
- D. Liu et al., 229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection, Applied Physics Letter 112, 081101 (2018)
- M. Kim et al., Fabrication of Ge on insulator wafers by Smart-CutTM with thermal management for undamaged donor Ge wafers, Semiconductor Science Technology 33, 015017 (2018)
QuTech (TU Delft)
- N.W. Hendrickx et al., Gate-controlled quantum dots and superconductivity in planar germanium, Nature Communications 9, 2835 (2018). https://www.nature.com/articles/s41467-018-05299-x
- N. Samkharadze et al., Strong spin-photon coupling in silicon, Science 359, 1123 (2018), https://doi.org/10.1126/science.aar4054
Research Center Juelich - Peter Gruenberg Institute
- D. Rainko et al., Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures, Scientific Reports 8 (1), 15557 (2018), https://dx.doi.org/10.1038/s41598-018-33820-1
- D. Stange et al., GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers, ACS Photonics 5, 4628 (2018), https://dx.doi.org/10.1021/acsphotonics.8b01116
- N. von den Driesch et al., (Invited) Epitaxy of Direct Bandgap Group IV Si-Ge-Sn Alloys towards Heterostructure Light Emitters, ECS Transactions 86 (7), 189 (2018), http://ecst.ecsdl.org/content/86/7/189.full.pdf+html?sid=b3b5e8ef-d955-4c55-82e6-4622fbc3fd93
- N. von den Driesch et al., Advanced GeSn/SiGeSn Group IV Heterostructure Lasers, Advanced Science, 1700955 (2018), https://onlinelibrary.wiley.com/doi/full/10.1002/advs.201700955
Roma Tre
- M. Montanari et. al., Photoluminescence study of inter-band transitions in few, pseudomorphic and strain-unbalanced Ge/GeSi multiple quantum wells, Physical Review B 98, 195310 (2018) https://doi.org/10.1103/PhysRevB.98.195310.
- L. Di Gaspare et al. Early stage of CVD graphene synthesis on Ge(001) substrate, Carbon 134, 183 (2018) https://www.sciencedirect.com/science/article/pii/S0008622318303439
- L. Persichetti, et al. Formation of extended thermal etch pits on annealed Ge wafers, Applied Surface Science 462, 86 (2018). 10.1016/j.apsusc.2018.08.075.
Shizuoka University
- J. Utsumi, et al., Reduced Thermal Conductivity of Ge1-xSnx Layer Formed on Self-assembled Sn Nanodots Template, Semicond. Sci. Technol. 33, 124004-1-124004-7 (2018), https://iopscience.iop.org/article/10.1088/1361-6641/aadc00
Tohoku University
- J. Murota et al., Atomically controlled processing for dopant segregation in CVD Si and Ge epitaxial growth, ECS Journal of Solid State Science and Technology 7 (6), P305 (2018), http://jss.ecsdl.org/content/7/6/P305.short
University of Milano-Bicocca (UNIMIB)
- F. Rovaris et al., Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back, Phys. Rev. Appl. 10, 054067 (2018). https://doi.org/10.1103/PhysRevApplied.10.054067
- F. Montalenti et al., Dislocation-Free SiGe/Si Heterostructures, Crystals 8, 257 (2018). https://doi.org/10.3390/cryst8060257
- S. De Cesari et al., Optically reconfigurable polarized emission in Germanium. Scientific Reports 8, 11119 (2018), https://www.nature.com/articles/s41598-018-29409-3.pdf