Conference Proceedings:

 

Journal Papers (list is updated on a regular base)

2021

 

Imec:

  • R. Loo et al., Epitaxial Growth of Active Si on top of SiGe Etch Stop Layer in View of 3D Device Integration, ECS J. Solid State Sci. Technol. 10, 014001, (2021), https://doi.org/10.1149/2162-8777/abd885

 

2020

Aalto University:

  • J. Slotte et al., In Situ Positron Annihilation Spectroscopy Analysis on Low Temperature Irradiated Semiconductors, Challenges and Possibilities, physica status solidi A, 2000232 (2020), https://doi.org/10.1002/pssa.202000232
  • A. Khanam et al., A demonstration of donor passivation through direct formation of V-Asi complexes in As-doped Ge1−xSnx, J. Appl. Phys. 127, 195703 (2020), https://doi.org/10.1063/5.0003999

 

AMO + MINAS - R.W.T.H. Aachen:

  • A. Gaho et al., Dependable Contact Related Parameter Extraction in Graphene-Metal Junctions, Adv. Electron. Mater.6 (10), 2000386 (2020), https://doi.org/10.1002/aelm.202000386 
  • D. De Fazio et al., Graphene-Quantum Dot Hybrid Photodetectors with Low Dark-Current Readout, ACS Nano 14 (9), 11897 (2020), https://doi.org/10.1021/acsnano.0c04848 
  • D. K. Polyushkin et al., Analogue Two-Dimensional Semiconductor Electronics, Nat. Electron. 3, 486 (2020), https://doi.org/10.1038/s41928-020-0460-6 
  • M. C. Lemme et al., NANOELECTROMECHANICAL SENSORS BASED ON SUSPENDED 2D MATERIALS, RESEARCH  2020,  Article ID 8748602, https://doi.org/10.34133/2020/8748602 
  • Y. Y. Illarionov et al., INSULATORS FOR 2D NANOELECTRONICS: THE GAP TO BRIDGE, Nat Commun 11, 3385 (2020), https://doi.org/10.1038/s41467-020-16640-8 
  • A. Manolis et al., ULTRA-SENSITIVE REFRACTIVE INDEX SENSOR USING CMOS PLASMONIC TRANSDUCERS ON SILICON PHOTONIC INTERFEROMETRIC PLATFORM, Opt. Express 28, 20992 (2020), https://doi.org/10.1364/OE.383435 
  • S. Riazimehr et al., CAPACITANCE–VOLTAGE (C–V ) CHARACTERIZATION OF GRAPHENE–SILICON HETEROJUNCTION PHOTODIODES, Adv. Optical Mater. 8, 2000169 (2020), https://doi.org/10.1002/adom.202000169 
  • F. Driussi et al., DEPENDABILITY ASSESSMENT OF TRANSFER LENGTH METHOD TO EXTRACT THE METAL–GRAPHENE CONTACT RESISTANCE, IEEE Trans. Semicond. Manuf. 33, 210 (2020), DOI: 10.1109/TSM.2020.2981199 
  • S. Wittmann et al., DIELECTRIC SURFACE CHARGE ENGINEERING FOR ELECTROSTATIC DOPING OF GRAPHENE, ACS Appl. Electron. Mater. 2 (5), 1235 (2020), https://doi.org/10.1021/acsaelm.0c00051 
  • D. Fadil et al., A BROADBAND ACTIVE MICROWAVE MONOLITHICALLY INTEGRATED CIRCUIT BALUN IN GRAPHENE TECHNOLOGY, Appl. Sci. 10 (6), 2183 (2020), https://doi.org/10.3390/app10062183 
  • X. Fan et al., MANUFACTURE AND CHARACTERIZATION OF GRAPHENE MEMBRANES WITH SUSPENDED SILICON PROOF MASSES FOR MEMS AND NEMS APPLICATIONS, Microsyst. Nanoeng. 6, 17 (2020), https://doi.org/10.1038/s41378-019-0128-4
  • M. Belete et al., ELECTRON TRANSPORT ACROSS VERTICAL SILICON/MOS2/GRAPHENE HETEROSTRUCTURES: TOWARDS EFFICIENT EMITTER DIODES FOR GRAPHENE BASE HOT ELECTRON TRANSISTORS, ACS Applied Materials + Interfaces 12 (8), 9656 (2020), https://doi.org/10.1021/acsami.9b21691

 

Brandenburgische Technische Universität (BTU):

 

CEA-LETI:

 

Eindhoven University of Technology (TUE):  

 

IHP:

  • P. Steglich et al., CMOS-Compatible Silicon Photonic Sensor for Refractive Index Sensing using Local Back-Side Release, 32 (19), 1241 (2020), DOI: 10.1109/LPT.2020.3019114 
  • O.Skibitzki et al. Reduction of Threading Dislocation Density beyond the saturation limit by optimized reverse grading, Physical Review Materials 4 (10), 103403 (2020). DOI:https://doi.org/10.1103/PhysRevMaterials.4.103403 
      • Y. Yamamoto et al., Threading Dislocation Reduction of Ge by Introducing a SiGe/Ge Superlattice, ECS Transactions 98 (5), 185 (2020), DOI:10.1149/09805.0185ecst,
      • D. Wolansky et al., Nickel and Nickel-Platinum Silicide for BiCMOS Devices, ECS Transactions 98 (5), 351 (2020), DOI: 10.1149/09805.0351ecst
      • S. Lischke et al., Directly Silicon Nitride Waveguide Coupled Ge Photodiode for Non-SOI PIC and Epic Platforms, ECS Transactions 98 (5), 315 (2020), DOI: 10.1149/09805.0315ecst
      • Y. Yamamoto et al., Ge/SiGe multiple quantum well fabrication by reduced-pressure chemical vapor Deposition, Jpn. J. Appl. Phys. 59 SGGK10 (2020), https://iopscience.iop.org/article/10.7567/1347-4065/ab65d0
      • C.L. Manganelli et al., Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis, J Raman Spectrosc. 2020, 1-8, https://doi.org/10.1002/jrs.5860
      • V. Schlykow, et al. Ge(Sn) nano-island photodetectors with plasmonic antennas, Nanotechnol. 31, 345203 (2020). https://iopscience.iop.org/article/10.1088/1361-6528/ab91ef
      • P. Steglich et al. Direct Observation and Simultaneous Use of Linear and Quadratic Electro-Optical Effects, Journal of Physics D: Applied Physics, 53 (12), 125106 (2020), DOI: 10.1088/1361-6463/ab6059
      • K. M. Mamathamba et Al., Influence of Specific Forming Algorithms on the Device-to-Device Variability of Memristive Al-Doped HfO2Arrays, Journal of Vacuum Science and Technology B, 38(1), 013201 (2020), https://doi.org/10.1116/1.5126936

 

 IMB-CNM-CSIC: 

  • J.M. Rafí, G. Pellegrini, P. Godignon, et al., Electron, neutron and proton irradiation effects on SiC radiation detectors, IEEE Transactions on Nuclear Science 67 (12),  2481-2489 (2020), https://doi.org/10.1109/TNS.2020.3029730
  • M.C. Jiménez-Ramos, et al., IBIC analysis of SiC detectors developed for fusion applications, Radiation Physics and Chemistry 177, 109100 (2020), https://doi.org/10.1016/j.radphyschem.2020.109100
  • J.C. Hönig, et al., Investigation of nitrogen enriched silicon for particle detectors, Journal of Instrumentation 15, P05006 (2020), https://doi.org/10.1088/1748-0221/15/05/P05006
  • S. Aslanidou, A.García-García, P. Godignon, G. Rius, Electronic interface and charge carrier density in epitaxial graphene on silicon carbide. A review on metal–graphene contacts and electrical gating, APL Materials 8, 100702 (2020), https://doi.org/10.1063/5.0022341

 

Imec:

 

Kyushu University:

 

Nagoya University (see also here and here): 

 

National Taiwan University: 

  • Yu-Shiang Huang et al., First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoped Channels, Symposia on VLSI Technology and Circuits (VLSI), 2020.
  • Chia-Che Chung et al., Interpretable Neural Network to Model and to Reduce Self-Heating of FinFET Circuitry, Symposia on VLSI Technology and Circuits (VLSI), 2020.
  • Fang-Liang Lu, Record Low Contact Resistivity to Ge:B (8.1x10-10Ω-cm2) and GeSn:B (4.1x10-10Ω-cm2) with Optimized [B] and [Sn] by In-situ CVD Doping, Symposia on VLSI Technology and Circuits (VLSI), 2020.

 

POLYTECHNIQUE MONTREAL

  • S. Koelling et al., Probing semiconductor hetero-structures from the atomic to the micrometer scale, ECS Transactions 98 (5), 447 (2020), https://iopscience.iop.org/article/10.1149/09805.0447ecst/pdf
  • S. Mukherjee et al., Disentangling Phonon Channels in Nanoscale Thermal Transport (arXiv preprint arXiv:2007.04306)
  • A. Attiaoui et al., Extended Short-Wave Infrared Absorption in Group IV Nanowire Arrays (arXiv preprint arXiv:2007.03460)
  • M. Fortin-Deschênes et al., Pnictogens Allotropy and Phase Transformation during van der Waals Growth (arXiv preprint arXiv:2005.14041)
  • S. Assali et al., Mid-infrared emission and absorption in strained and relaxed GeSn semiconductors(arXiv preprint arXiv:2004.13858)
  • M. R. M. Atalla, All-group IV transferable membrane for room-temperature mid-infrared photodetectors (arXiv:2007.12239), Advanced Functional Materials Vol. xx, xxxxx (2020), DOI: 10.1002/adfm.202006329
  • P. Del Vecchio, et al., Vanishing Zeeman energy in a two-dimensional hole gas, Physical Review B 102, 115304 (2020), DOI: https://doi.org/10.1103/PhysRevB.102.115304 
  • J. Nicolas et al., Dislocation pipe diffusion and solute segregation during the growth of metastable GeSn, Crystal Growth and Design 20, 3493 (2020), DOI: https://doi.org/10.1021/acs.cgd.0c00270
  • T. Grange et al., Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering, Physical Review Applied 13, 044062 (2020), DOI: https://doi.org/10.1103/PhysRevApplied.13.044062 
  • M. FortinDeschênes et al., Two-Dimensional Antimony-Arsenic Alloys, Small 127, 1906540 (2020), DOI: https://doi.org/10.1002/smll.201906540
  • Q. An et al., Effects of short-range order and interfacial interactions on the electronic structure of two-dimensional antimony-arsenic alloys, Journal of Applied Physics 127, 025305 (2020), DOI: https://doi.org/10.1063/1.5131262
  • S. Mukherjee et al., 3-D Atomic Mapping of Interfacial Roughness and its Spatial Correlation Length in sub-10 nm Superlattices, ACS Applied Materials and Interfaces 12, 1728 (2020), DOI: https://doi.org/10.1021/acsami.9b13802   
  • É. Bouthillier et al., Decoupling the effects of composition and strain on the vibrational modes of GeSn, Semiconductor Science and Technology 35, 09006 (2020), DOI: https://doi.org/10.1088/1361-6641/ab9846

 

QuTech (TU Delft):

  • F. van Riggelen et al., A two-dimensional array of single-hole quantum dots, arXiv:2008.11666, http//arxiv.org/abs/2008.11666
  • M. Lodari et al., Low percolation density and charge noise with holes in germanium, arXiv:2007.06328, http//arxiv.org/abs/2007.06328
  • W. I. L. Lawrie et al., Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots, arXiv:2006.12563, http//arxiv.org/abs/2006.12563
  • B. Paquelet Wuetz et al., Effect of quantum Hall edge strips on valley splitting in silicon quantum wells, arXiv:2006.02305, http//arxiv.org/abs/2006.02305
  • P. Del Vecchio et al., Vanishing Zeeman energy in a two-dimensional hole gas., arXiv:2006.00102, https://arxiv.org/abs/2006.00102
  • P. Harvey-Collard et al., On-chip microwave filters for high-impedance resonators with gate-defined quantum dots, arXiv:2005.05411, https://arxiv.org/abs/2005.05411
  • Y. Xu et al., On-chip Integration of Si/SiGe-based Quantum Dots and Switched-capacitor Circuits, arXiv:2005.03851, https://arxiv.org/abs/2005.03851
  • T. Scappucci et al., The germanium quantum information route, arXiv:2004.08133, https://arxiv.org/abs/2004.08133 
  • N.W. Hendrickx et al., A single-hole spin qubit, Nat Commun 11, 3478 (2020). https://doi.org/10.1038/s41467-020-17211-7
  • B.P. Wuetz et al., Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures, npj Quantum Information 6, 43 (2020), https://www.nature.com/articles/s41534-020-0274-4
  • W. I. L. Lawrie et. al., Quantum Dot Arrays in Silicon and Germanium, Applied Physics Letters 116, 080501 (2020), https://aip.scitation.org/doi/abs/10.1063/5.0002013
  • N. Hendrickx et al., Fast two-qubit logic with holes in germanium, Nature 577, 487 (2020), https://www.nature.com/articles/s41586-019-1919-3

 

Research Center Juelich - Peter Gruenberg Institute: 

  • N. von den Driesch et al., Thermally activated diffusion and lattice relaxation in (Si)GeSn materials, Physical Review Materials 4, 033604 (2020). 

 

Roma Tre:

 

Tohoku University:

 

University of Milano-Bicocca (UNIMIB) (see also Materials and Lassem): 

  • L. Becker et al., Controlling the relaxation mechanism of low strain Si1-xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source, J. Appl. Phys. 128, 215305 (2020), https://doi.org/10.1063/5.0032454
  • D. Lanzoni, F. Rovaris, and F. Montalenti, Computational Analysis of Low-Energy Dislocation Configurations in Graded Layers, Crystals 10, 661 (2020), https://www.mdpi.com/2073-4352/10/8/661
  • E. Scalise et al., The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach, J. Mat. Chem. C 8, 8380 (2020), https://doi.org/10.1039/d0tc00909a
  • A. Barzaghi et al., Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates, Cryst. Growth. & Des. 20, 2914 (2020), https://doi.org/10.1021/acs.cgd.9b01312
  • M. Bollani et al., Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study, Crystals 10, 57 (2020), https://www.mdpi.com/2073-4352/10/2/57
  • S. Assali et al., Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires, ACS Nano 14, 2445 (2020), https://doi.org/10.1021/acsnano.9b09929
  • A. Sarikov et al., Molecular dynamics simulations of extended defects and their evolution in 3C?SiC by different potentials, Modelling and Sim. in Mat. Sci. & Engin. 28, 015002 (2020), https://doi.org/10.1088/1361-651X/ab50c7
  • E. Vitiello et al., Magneto-optical determination of the carrier lifetime in coherent Ge(1-x)Sn(x)/Ge heterostructures, arXiv:2009.01087, https://arxiv.org/abs/2009.01087
  • J. Pedrini et al., Broadband control of the optical properties of semiconductors through site-controlled self-assembly of microcrystals, Optics express, 28, 24981 (2020), https://doi.org/10.1088/1361-651X/ab50c7

 

2019

Brandenburgische Technische Universität (BTU):

 

CEA-LETI:

 

CINTECX (University of VIGO):

  • M. C. J.Weiser et al., Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy, IEEE Proceedings MIPRO (2019) 1-6, DOI: 10.23919/MIPRO.2019.8756640, ISSN: 2623-8764, https://ieeexplore.ieee.org/document/8756640
  • J. Schlipf et al. Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy, J. of Vacuum Science and Technology B: Nanotechnology and Microelectronics B 37, 061213 (2019) 1-6, https://doi.org/10.1116/1.5122777¨

 

Eindhoven University of Technology (TUE):

 

IHP:

 

IMB-CNM-CSIC:

  • M. Cabello, et al., Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs, Materials Science in Semiconductor Processing 93, 357-359 (2019), https://www.sciencedirect.com/science/article/pii/S1369800118319309
  • E. Masvidal-Codina, et al., High-resolution mapping of infraslow cortical brain activity enabled by graphene microtransistors, Nature Materials 18, 280-299 (2019), https://www.nature.com/articles/s41563-018-0249-4
  • V. Banu, M. Popescu, P. Godignon, Delta Reference, the Latest High Temperature Compensated Voltage Reference Concept, European Space Power Conference (ESPC) Juan-les-Pins, FRANCE SEP 30-OCT 04, 2019

 

Imec:

 

Kyushu Universiy: 

  • K. Yamamoto et al., Conduction Type Control of Ge-on-Insulator: Combination of Smart-CutTM and Defect Elimination, ECS transactions 93 (1), p. 73(2019) https://dx.doi.org/10.1149/09301.0073ecst
  • K. Moto et al., Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass, Appl. Phys. Lett. 114, p. 212107 (2019), https://doi.org/10.1063/1.5093952
  • K. Yamamoto et al., Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation, Jpn. J. Appl. Phys. 58, p. SBBA14 (2019), https://doi.org/10.7567/1347-4065/ab02e3
  • T. Maekura et al., Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate, Jpn. J. Appl. Phys., 58, p. SBBE05 (2019), https://doi.org/10.7567/1347-4065/aafb5e

 

Nagoya University: 

  • S. Miyazaki et al., Photoemission-based Characterization of Gate Dielectrics and Stack Interfaces, ECS Transactions 92 (4) 11 (2019), https://iopscience.iop.org/article/10.1149/09204.0011ecst
  • S.Fujimori et al, Effect of H2-dilution in Si-cap formation on photoluminescence intensity of Si quantum dots with Ge core, Japanese Journal of Applied Physics 58 SIIA01 (2019), https://doi.org/10.7567/1347-4065/ab0c7a
  • S. Miyazaki et al., Photoemission Characterization of Interface Dipoles and Electronic Defect States for Gate Dielectrics, ECS Transactions 90 (1) 113 (2019), https://doi.org/10.1149/09001.0113ecst
  • M. Kurosawa et al., Synthesis of heavily Ga-doped Si1xSnx/Si heterostructures and their valence-band-offset determination, Japanese Journal of Applied Physics. 58, SAAD02 (4 pages) (2019), https://doi.org/10.7567/1347-4065/aaeb36
  • Y. Miki et al., Influence of Sn precursors on Ge1xSnx growth using metal-organic chemical vapor deposition, Japanese Journal of Applied Physics 58, SAAD07 (7 pages) (2019), https://doi.org/10.7567/1347-4065/aaec1a
  • K. Takahashi et al., Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process, Applied Physics Express 12 (5), 051016 (5 pages) (2019), https://doi.org/10.7567/1882-0786/ab1969
  • M. Fukuda et al., Formation and Optoelectronic Property of Strain-relaxed Ge1xySixSny/Ge1xSnx/Ge1xySixSny Double Heterostructures on Boron-Ion-Implanted Ge(001) Substrate, Japanese Journal of Applied Physics 58, SIIB23 (2019), https://doi.org/10.7567/1347-4065/ab1b62
  • Y. Peng et al., Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation, Scientific Reports 9, 14342 (9 pages) (2019), https://doi.org/10.1038/s41598-019-50754-4

 

National Taiwan University: 

  • Yu-Shiang Huang et al., First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=40nm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise, p. 689, International Electron Devices Meeting (IEDM), 2019.
  • Chien-Te Tu et al., First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μA at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V, p. 681, International Electron Devices Meeting (IEDM), 2019.
  • Min-Hung Lee et al., Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs, p. 566, International Electron Devices Meeting (IEDM), 2019.

 

POLYTECHNIQUE MONTREAL:

  • S. Assali et al., Vacancy complexes in nonequilibrium germanium-tin semiconductors, Applied Physics Letters 114, 251907 (2019), DOI: https://doi.org/10.1063/1.5108878 
  • M. Fortin-Deschênes et al., Dynamics of Antimonene-Graphene van der Waals Growth, Advanced Materials 31, 1900569 (2019), DOI: https://doi.org/10.1002/adma.201900569
  • R. M. Jacobberger et al., Alignment of semiconducting graphene nanoribbons on vicinal Ge(001), Nanoscale 14, 4864 (2019), DOI: https://doi.org/10.1039/C9NR00713J
  • S. Assali et al., Enhanced Sn incorporation in GeSn epitaxial layers via strain relaxation, Journal of Applied Physics 125, 025304 (2019), DOI: https://doi.org/10.1063/1.5050273

 

QuTech (TU Delft): 

 

Research Center Juelich - Peter Gruenberg Institute:

 

Roma Tre: 

 

University of Milano-Bicocca (UNIMIB):

 

2018

CEA-LETI:

 

Eindhoven University of Technology (TUE): 

 

IHP:

 

IMB-CNM-CSIC:

 

Imec:

 

Kyushu University: 

  • W.-C. Wen et al., Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy J. Appl. Phys., 124, (20), p. 205303 (2018), https://doi.org/10.1063/1.5055291
  • K. Yamamoto et al., Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition, Semiconductor Science and Technology, 33, p. 114011 (2018), https://doi.org/10.1088/1361-6641/aae4bd

 

Nagoya University:

  • R. Nagai et al., Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core, Semiconductor Science and Technology 33 124021 (2018), https://doi.org/10.1088/1361-6641/aaebbc
  • Y. Futamura et al., Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy, Japanese Journal of Applied Physics 58 SAAE01 (2018), https://doi.org/10.7567/1347-4065/aaeb38
  • H. Zhang et al., High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots, ECS Transactions 86 (7), 131 (2018), doi:10.1149/08607.0131ecst
  • Y. Wen et al., Formation of Mn-germanide nanodots on ultrathin SiO2 induced by remote hydrogen plasma, Japanese Journal of Applied Physics 57 01AF05 (2018), https://doi.org/10.7567/JJAP.57.01AF05
  • K. Ito et al., Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient, Japanese Journal of Applied Physics 57 06HD08 (2018), https://doi.org/10.7567/JJAP.57.06HD08
  • K. Ito et al., Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si+Ge) compositions, Japanese Journal of Applied Physics 57, 04FJ05 (2018), https://iopscience.iop.org/article/10.7567/JJAP.57.04FJ05
  • K. Makihara et al., Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection, Applied Physics Express 11, 011305 (2018), https://doi.org/10.7567/APEX.11.011305
  • S. Ike et al., Epitaxial growth of heavily doped n+-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping, Thin Solid films 645 (1), 57-63 (2018), https://doi.org/10.1016/j.tsf.2017.10.013
  • W. Takeuchi et al., Selective growth of Ge1-xSnx epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition, Japanese Journal of Applied Physics 57 (1S), 01AC05 (5 pages) (2018), https://doi.org/10.7567/JJAP.57.01AC05
  • K. Takahashi et al., High n-type Sb dopant activation in Ge-rich poly-Ge1−xSnx layers on SiO2 using pulsed laser annealing in flowing water, Applied Physics Letters 112, 062104 (4 pages) (2018), https://doi.org/10.1063/1.4997369
  • K. Takahashi et al., Dopant behavior in heavily doped polycrystalline Ge1−xSnx layers prepared with pulsed laser annealing in water, Japanese Journal of Applied Physics 57 (4S), 04FJ02 (6 pages) (2018), https://doi.org/10.7567/JJAP.57.04FJ02
  • A. Suzuki et al., Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched SixGe1−x−ySny ternary alloy interlayer on Ge, Japanese Journal of Applied Physics 57 (6), 07MA05 (5 pages) (2018), https://doi.org/10.7567/JJAP.57.060304
  • O. Nakatsuka et al., Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties, Japanese Journal of Applied Physics 57 (7S2), 060304 (4 pages) (2018), https://doi.org/10.7567/JJAP.57.07MA05
  • J. Jeon et al., Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n+-Ge1−xSnx structure, Semiconductor Science and Technology 33 (12), 124001 (2018), https://doi.org/10.1088/1361-6641/aae624
  • M. Fukuda et al., Optoelectronic properties of high-Si-content-Ge1−x–ySixSny/Ge1−xSnx/Ge1−x–ySixSny double heterostructure, Semiconductor Science and Technology 33 (12), 124018 (8 pages) (2018), https://doi.org/10.1088/1361-6641/aaebb5
  • J. Jeon et al., Growth and electrical properties of in situ Sb-doped Ge1−xSnx epitaxial layers for source/drain stressor of strained-Ge transistors, Japanese Journal of Applied Physics 57 (12), 121303 (6 pages) (2018), https://doi.org/10.7567/JJAP.57.121303

 

QuTech (TU Delft):

 

Research Center Juelich - Peter Gruenberg Institute:

 

Roma Tre: 

  • M. Montanari et. al., Photoluminescence study of inter-band transitions in few, pseudomorphic and strain-unbalanced Ge/GeSi multiple quantum wells, Physical Review B 98, 195310 (2018) https://doi.org/10.1103/PhysRevB.98.195310.
  • L. Di Gaspare et al. Early stage of CVD graphene synthesis on Ge(001) substrate,  Carbon 134, 183  (2018) https://www.sciencedirect.com/science/article/pii/S0008622318303439
  • L. Persichetti, et al. Formation of extended thermal etch pits on annealed Ge wafers, Applied Surface Science 462, 86 (2018). 10.1016/j.apsusc.2018.08.075.

 

Shizuoka University:

 

Tohoku University:

  • J. Murota et al., Atomically controlled processing for dopant segregation in CVD Si and Ge epitaxial growth, ECS Journal of Solid State Science and Technology 7 (6), P305 (2018), http://jss.ecsdl.org/content/7/6/P305.short

 

University of Milano-Bicocca (UNIMIB):