Conference Proceedings:

• Proceedings of the 9th International SiGe, Ge, & Related Compounds: Materials, Processing, and Devices Symposium (ECS 2020 Fall Meeting): https://iopscience.iop.org/issue/1938-5862/98/5
• Proceedings of the 2nd joint ISTDM/ICSI conference (June 2-6, 2019, Madison, WI, USA), ECS Transactions 93 (1): https://iopscience.iop.org/issue/1938-5862/93/1
• Proceedings of the 1st joint ISTDM/ICSI conference  (May 27 - 31,2018, Postdam, Germany): https://iopscience.iop.org/journal/0268-1242/page/special-issue-on-SiGe-materials 
• Proceedings of the 8th International SiGe, Ge, & Related Compounds: Materials, Processing, and Devices Symposium (ECS 2018 Fall Meeting): https://iopscience.iop.org/issue/1938-5862/86/7
• Proceedings of the 10th Int. Conference on Si Epitaxy and Heterostructures, ICSI-10 (May 14-19, 2017, Warwick, UK): https://iopscience.iop.org/journal/0268-1242/page/Special-issue-on-Silicon-Epitaxy-and-Silicon-Heterostructures 

Journal Papers (list is updated on a regular base)

2020

Aalto University:

• J. Slotte et al., In Situ Positron Annihilation Spectroscopy Analysis on Low Temperature Irradiated Semiconductors, Challenges and Possibilities, physica status solidi A, 2000232 (2020), https://doi.org/10.1002/pssa.202000232
• A. Khanam et al., A demonstration of donor passivation through direct formation of V-Asi complexes in As-doped Ge1−xSnx, J. Appl. Phys. 127, 195703 (2020), https://doi.org/10.1063/5.0003999

Brandenburgische Technische Universität (BTU):

• I. A. Fischer et al., Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells, Phys. Rev. Mat. 4, 2475-9953 (2020), https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.4.024601
• L. Augel et al., Comparing Fourier transform infrared spectroscopy results with photocurrent measurements for Ge-on-Si PIN photodetectors with and without Al nanoantennas, Journal of Applied Physics 128, 013105 (2020), https://aip.scitation.org/doi/full/10.1063/5.0012279

CEA-LETI:

• • • J. M. Hartmann et al., Ultra-High Boron Doping of Si and Ge for Nanoelectronics and Photonics, ECS Transactions 98 (5), 203 (2020), https://iopscience.iop.org/article/10.1149/09805.0203ecst/pdf
    • J. M. Hartmann et al., Epitaxy of Pseudomorphic GeSn Layers with Germane (GeH4 ) or Digermane (Ge2 H6 ) as Ge Precursors and Tin Tetrachloride (SnCl4 ) as the Sn Precursor, ECS Transactions 98 (5), 225 (2020), https://iopscience.iop.org/article/10.1149/09805.0225ecst/pdf
    • M. Frauenrath et al., Boron and Phosphorous Doping of GeSn for Photodetectors and Light Emitting Diodes, ECS Transactions 98 (5), 325 (2020), https://iopscience.iop.org/article/10.1149/09805.0325ecst/pdf
    • A. Quintero et al., Analysis of Sn behavior during Ni / GeSn solid-state reaction by correlated X-ray Diffraction, Atomic Force Microscopy and ex-situ/in-situ Transmission Electron Microscopy, ECS Transactions 98 (5), 365 (2020), https://iopscience.iop.org/article/10.1149/09805.0365ecst/pdf
    • D. Benedikovic et al., 40  Gbps heterostructure germanium avalanche photo receiver on a silicon chip, Optica 7 (7), p. 775 (2020), https://doi.org/10.1364/OPTICA.393537
    • M. Sinobad et al., Mid-infrared supercontinuum generation in silicon-germanium all-normal dispersion waveguides , Optics Letters 45 (18), p. 5008 (2020), https://doi.org/10.1364/OL.402159
    • J.M. Hartmann, Very low temperature growth of GeSi alloys with digermane, disilane and dichlorosilane, Journal of Crystal Growth 546, 125789 (2020), https://doi.org/10.1016/j.jcrysgro.2020.125789
    • J.M. Hartmann and M. Veillerot, HCl + GeH4 etching for the low temperature cyclic deposition/etch of Si, Si:P, tensile-Si:P and SiGe(:B),  Semiconductor Science and Technology 35, 015015 (2020) ; https://iopscience.iop.org/article/10.1088/1361-6641/ab52ec/meta
    • A, Aliane et al., Fabrication and characterization of sensitive vertical P-i-N germanium photodiodes as infrared detectors, Semiconductor Science and Technology 35, 035013 (2020) ; https://iopscience.iop.org/article/10.1088/1361-6641/ab6bf7/meta
    • A. Quintero et al., Impact of alloying elements (Co, Pt) on nickel stanogermanide formation, Materials Science in Semiconductor Processing 108, 104890 (2020) ; https://doi.org/10.1016/j.mssp.2019.104890
    • S. Rachidi et al., Isotropic dry etching of Si selectively to Si0.7Ge0.3 for CMOS sub-10 nm applications, Journal of Vacuum Science & Technology A 38, 033002 (2020) ; https://doi.org/10.1116/1.5143118
    • L. Dagault et al., Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si1−xGex/Si epilayers, Applied Surface Science 527, 146752 (2020) ; https://doi.org/10.1016/j.apsusc.2020.146752

Eindhoven University of Technology (TUE):  

• E.M.T. Fadaly et al., Direct-bandgap emission from hexagonal Ge and SiGe alloys, Nature 580, 205 - 209 (2020), https://www.nature.com/articles/s41586-020-2150-y

IHP:

• O. Skibitzki et al. Reduction of Threading Dislocation Density beyond the saturation limit by optimized reverse grading, Physical Review Materials 4 (10), 103403 (2020). DOI:https://doi.org/10.1103/PhysRevMaterials.4.103403 
• • • Y. Yamamoto et al., Threading Dislocation Reduction of Ge by Introducing a SiGe/Ge Superlattice, ECS Transactions 98 (5), 185 (2020), https://iopscience.iop.org/article/10.1149/09805.0185ecst/pdf
    • S. Lischke et al., Directly Silicon Nitride Waveguide Coupled Ge Photodiode for Non-SOI PIC and Epic Platforms, ECS Transactions 98 (5), 315 (2020), https://iopscience.iop.org/article/10.1149/09805.0315ecst/pdf
    • D. Wolansky et al., Nickel and Nickel-Platinum Silicide for BiCMOS Devices, ECS Transactions 98 (5), 351 (2020), https://iopscience.iop.org/article/10.1149/09805.0351ecst/pdf
    • Y. Yamamoto et al., “Ge/SiGe multiple quantum well fabrication by reduced-pressure chemical vapor Deposition”, Jpn. J. Appl. Phys. 59 SGGK10 (2020), https://iopscience.iop.org/article/10.7567/1347-4065/ab65d0
    • C.L. Manganelli et al., Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis, J Raman Spectrosc. 2020, 1-8, https://doi.org/10.1002/jrs.5860
    • V. Schlykow, et al. Ge(Sn) nano-island photodetectors with plasmonic antennas, Nanotechnol.  31, 345203 (2020). https://iopscience.iop.org/article/10.1088/1361-6528/ab91ef
    • P. Steglich et al. “Direct Observation and Simultaneous Use of Linear and Quadratic Electro-Optical Effects”, Journal of Physics D: Applied Physics, 53 (12), 125106 (2020), DOI: 10.1088/1361-6463/ab6059
• K. M. Mamathamba et Al., “Influence of Specific Forming Algorithms on the Device-to-Device Variability of Memristive Al-Doped HfO₂Arrays”, Journal of Vacuum Science and Technology B, 38(1), 013201 (2020), https://doi.org/10.1116/1.5126936

Imec:

• N. Horiguchi and Z. Tokei, A View on the Logic Technology Roadmap, Semiconductor Digest, August/September issue, pp. 12-17 (2020)
• R. Loo et al., Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration, ECS Transactions 98 (4), 157 (2020), https://iopscience.iop.org/article/10.1149/09804.0157ecst/pdf
• G. Rengo et al., Highly Doped Si_1-XGe_x Epitaxy in View of S/D Applications, ECS Transactions 98 (5), 27 (2020), https://iopscience.iop.org/article/10.1149/09805.0027ecst/pdf
• E. Rosseel et al., Contact Resistivity of Highly Doped Si:P, Si:As, and Si:P:As Epi Layers for Source/Drain Epitaxy, ECS Transactions 98 (5), 37 (2020), https://iopscience.iop.org/article/10.1149/09805.0037ecst/pdf
• A. Hikavyy et al., Investigation of Low Temperature Epitaxial SiGe:P in View of Source/Drain Application for 5nm Technology Node and Below, ECS Transactions 98 (5), 43 (2020), https://iopscience.iop.org/article/10.1149/09805.0043ecst/pdf
• R. Loo et al., Epitaxial Ge-on-Nothing Virtual Substrates for 3D Device Stacking Technologies, ECS Transactions 98 (5), 195 (2020), https://iopscience.iop.org/article/10.1149/09805.0195ecst/pdf
• G. Eneman et al., Stress Simulations of Fins, Wires and Nanosheets, ECS Transactions 98 (5) 253 (2020), https://iopscience.iop.org/article/10.1149/09805.0253ecst/pdf
• H. Arimura et al., Si-cap-free low-DIT SiGe gate stack for high-performance pFETs, ECS Transactions 98 (5), 377 (2020), https://iopscience.iop.org/article/10.1149/09805.0377ecst/pdf
• C.. Porret et al.,O-band GeSi quantum-confined Stark effect electro-absorption modulator integrated in a 220nm silicon photonics platform, VLSI-2020, JFS1.5
• H. Arimura et al, Addressing Key Challenges for SiGe-pFin Technologies: Fin Integrity, Low-DIT Si-cap-free Gate Stack and Optimizing the Channel Strain, VLSI-2020
• A. Vohra et al, Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx, ECS J. Solid State Sci. Technol. 9 (4), 044010 (2020) https://doi.org/10.1149/2162-8777/ab8d91
• A. Srinivasan et al., High absorption contrast quantum confined Stark effect in ultra-thin Ge/SiGe quantum well stack grown on Si, IEEE Journal of Quantum Electronics 56 (1), 1 (2020), https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8883247
• H. Han et al, Enhancing the defect contrast in ECCI through angular filtering of BSEs, Ultramicroscopy 210, 112922 (2020), https://doi.org/10.1016/j.ultramic.2019.112922
• C. Porret et al., Low Temperature Selective Growth of Heavily Boron-Doped Germanium Source /Low Temperature Selective Growth of Heavily Boron-Doped Germanium Source /Drain Layers for Advanced pMOS Devices, Physica Status Solidi A: Applications and Materials Science 217 (3), 1900628  (2020), https://doi.org/10.1002/pssa.201900628
• A. Veloso et al., Nanowire & nanosheet FETs for ultra-scaled, high-density logic and memory applications, Solid State Electronics 168, 107736 (2020), https://doi.org/10.1016/j.sse.2019.107736 
• D. Boudier et al., Low frequency noise analysis on Si/SiGe superlattice I/O n-channel FinFETs, Solid-State Electronics 168, 107732 (2020), https://doi.org/10.1016/j.sse.2019.107732
• A. Oliviera et al., Low-frequency noise in vertically stacked Si n-channel nanosheet FETs, IEEE Electron Device Letters 41 (3), 317 (2020), https://ieeexplore.ieee.org/document/8963943
• B. Hsu et al.,  A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors, ECS Journal of Solid State Science and Technology 9 (4), 044006-1 (2020), https://doi.org/10.1149/2162-8777/ab8b70

Kyushu University:

• T. Imajo et al., Underlayer Selection to Improve the Performance of Polycrystalline Ge Thin Film Transistors, ECS Transactions 98 (5), 423 (2020), https://iopscience.iop.org/article/10.1149/09805.0423ecst/pdf
• W.-C. Wen et al., Interface trap and border trap characterization for Al₂O₃/GeO_x/Ge gate stacks and influence of these traps on mobility of Ge p-MOSFET, AIP advances, in press, https://doi.org/10.1063/5.0002100
• R. Oka et al., High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al₂O₃ interlayer and its internal charge analysis, Jpn. J. Appl. Phys., 59, p. SGGD17 (2020), https://doi.org/10.35848/1347-4065/ab6862

Nagoya University: 

• O Nakatsuka et al., Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design, ECS Transactions 98 (5), 149 (2020), https://iopscience.iop.org/article/10.1149/09805.0149ecst/pdf
• T. Doi et al., Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate by Chemical Vapor Deposition using Single Precursor of Vinylsilane, ECS Transactions 98 (5), 169 (2020), https://iopscience.iop.org/article/10.1149/09805.0169ecst/pdf
• T. Niibayashi et al., Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode, ECS Transactions 98 (5), 429 (2020), https://iopscience.iop.org/article/10.1149/09805.0429ecst/pdf
• J. Wu et al., Characterization of Magnetic-Field Dependent Electron Transport of Fe3 Si Nanodots by Using a Magnetic AFM Probe, ECS Transactions 98 (5), 493 (2020), https://iopscience.iop.org/article/10.1149/09805.0493ecst/pdf
• H. Sugawa et al., Crystallization of Ge Thin Films on Sapphire(0001) by Thermal Annealing, ECS Transactions 98 (5), 505 (2020), https://iopscience.iop.org/article/10.1149/09805.0505ecst/pdf
• W. Takeuchi et al., Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor, Jpn. J. Appl. Phys. 59, SGGD08 (7 pages) (2020), https://doi.org/10.35848/1347-4065/ab6d85,
• H. Kobayashi et al., Preparation and thermoelectric characterization of phosphorus-doped Si nanocrystals/silicon oxide multilayers, Jpn. J. Appl. Phys. 59, SGGF09 (6 pages) (2020), https://doi.org/10.7567/1347-4065/ab6346,
• M. Kobayashi et al., Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface, Jpn. J. Appl. Phys. 59, SGGK15 (6 pages) (2020), https://doi.org/10.35848/1347-4065/ab69de,
• J. Jeon et al., Saturation of electrically activated Sb concentration in heavily Sb-doped n+-Ge1−xSnx epitaxial layers, Jpn. J. Appl. Phys. 59, SLLF02 (6 pages) (2020), https://doi.org/10.35848/1347-4065/ab867d,
• T. Doi et al., Impact of byproducts formed on a 4H–SiC surface on interface state density of Al2O3/4H–SiC(0001) gate stacks, Appl. Phys. Lett. 116, 222104 (5 pages) (2020), https://doi.org/10.1063/1.5143574

National Taiwan University: 

• Yu-Shiang Huang et al., First Demonstration of 4-Stacked Ge_0.915Sn_0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoped Channels, Symposia on VLSI Technology and Circuits (VLSI), 2020.
• Chia-Che Chung et al., Interpretable Neural Network to Model and to Reduce Self-Heating of FinFET Circuitry, Symposia on VLSI Technology and Circuits (VLSI), 2020.
• Fang-Liang Lu, Record Low Contact Resistivity to Ge:B (8.1x10^-10Ω-cm²) and GeSn:B (4.1x10^-10Ω-cm²) with Optimized [B] and [Sn] by In-situ CVD Doping, Symposia on VLSI Technology and Circuits (VLSI), 2020.

POLYTECHNIQUE MONTREAL

• S. Koelling et al., Probing semiconductor hetero-structures from the atomic to the micrometer scale, ECS Transactions 98 (5), 447 (2020), https://iopscience.iop.org/article/10.1149/09805.0447ecst/pdf
• S. Mukherjee et al., Disentangling Phonon Channels in Nanoscale Thermal Transport (arXiv preprint arXiv:2007.04306)
• A. Attiaoui et al., Extended Short-Wave Infrared Absorption in Group IV Nanowire Arrays (arXiv preprint arXiv:2007.03460)
• M. Fortin-Deschênes et al., Pnictogens Allotropy and Phase Transformation during van der Waals Growth (arXiv preprint arXiv:2005.14041)
• S. Assali et al., Mid-infrared emission and absorption in strained and relaxed GeSn semiconductors, (arXiv preprint arXiv:2004.13858)
• M. R. M. Atalla, All-group IV transferable membrane for room-temperature mid-infrared photodetectors (arXiv:2007.12239), Advanced Functional Materials Vol. xx, xxxxx (2020), DOI: 10.1002/adfm.202006329
• P. Del Vecchio, et al., Vanishing Zeeman energy in a two-dimensional hole gas, Physical Review B 102, 115304 (2020), DOI: https://doi.org/10.1103/PhysRevB.102.115304 
• J. Nicolas et al., Dislocation pipe diffusion and solute segregation during the growth of metastable GeSn, Crystal Growth and Design 20, 3493 (2020), DOI: https://doi.org/10.1021/acs.cgd.0c00270
• T. Grange et al., Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering, Physical Review Applied 13, 044062 (2020), DOI: https://doi.org/10.1103/PhysRevApplied.13.044062 
• M. Fortin‐Deschênes et al., Two-Dimensional Antimony-Arsenic Alloys, Small 127, 1906540 (2020), DOI: https://doi.org/10.1002/smll.201906540
• Q. An et al., Effects of short-range order and interfacial interactions on the electronic structure of two-dimensional antimony-arsenic alloys, Journal of Applied Physics 127, 025305 (2020), DOI: https://doi.org/10.1063/1.5131262
• S. Mukherjee et al., 3-D Atomic Mapping of Interfacial Roughness and its Spatial Correlation Length in sub-10 nm Superlattices, ACS Applied Materials and Interfaces 12, 1728 (2020), DOI: https://doi.org/10.1021/acsami.9b13802   
• É. Bouthillier et al., Decoupling the effects of composition and strain on the vibrational modes of GeSn, Semiconductor Science and Technology 35, 09006 (2020), DOI: https://doi.org/10.1088/1361-6641/ab9846

QuTech (TU Delft):

• F. van Riggelen et al., A two-dimensional array of single-hole quantum dots, arXiv:2008.11666, http//arxiv.org/abs/2008.11666
• M. Lodari et al., Low percolation density and charge noise with holes in germanium, arXiv:2007.06328, http//arxiv.org/abs/2007.06328
• W. I. L. Lawrie et al., Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots, arXiv:2006.12563, http//arxiv.org/abs/2006.12563
• B. Paquelet Wuetz et al., Effect of quantum Hall edge strips on valley splitting in silicon quantum wells, arXiv:2006.02305, http//arxiv.org/abs/2006.02305
• P. Del Vecchio et al., Vanishing Zeeman energy in a two-dimensional hole gas., arXiv:2006.00102, https://arxiv.org/abs/2006.00102
• P. Harvey-Collard et al., On-chip microwave filters for high-impedance resonators with gate-defined quantum dots, arXiv:2005.05411, https://arxiv.org/abs/2005.05411
• Y. Xu et al., On-chip Integration of Si/SiGe-based Quantum Dots and Switched-capacitor Circuits, arXiv:2005.03851, https://arxiv.org/abs/2005.03851
• T. Scappucci et al., The germanium quantum information route, arXiv:2004.08133, https://arxiv.org/abs/2004.08133 
• N.W. Hendrickx et al., A single-hole spin qubit, Nat Commun 11, 3478 (2020). https://doi.org/10.1038/s41467-020-17211-7
• B.P. Wuetz et al., Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures, npj Quantum Information 6, 43 (2020), https://www.nature.com/articles/s41534-020-0274-4
• W. I. L. Lawrie et. al., Quantum Dot Arrays in Silicon and Germanium, Applied Physics Letters 116, 080501 (2020), https://aip.scitation.org/doi/abs/10.1063/5.0002013
• N. Hendrickx et al., Fast two-qubit logic with holes in germanium, Nature 577, 487 (2020), https://www.nature.com/articles/s41586-019-1919-3

Research Center Juelich - Peter Gruenberg Institute: 

• N. von den Driesch et al., Thermally activated diffusion and lattice relaxation in (Si)GeSn materials, Physical Review Materials 4, 033604 (2020). 

Roma Tre:

• C. Ciano et al. Electron-phonon coupling in n-type Ge two-dimensional systems, Phys. Rev. B 102, 205302 (2020), https://link.aps.org/doi/10.1103/PhysRevB.102.205302
• L. Bagolini et al. Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n-type Ge/SiGe quantum fountains, Phys. Rev. B 101, 245302 (2020) https://journals.aps.org/prb/abstract/10.1103/PhysRevB.101.245302
• C. Ciano et al., Terahertz absorption-saturation and emission from electron-doped germanium quantum wells, Optics Express 28 (5), 724 (2020), https://doi.org/10.1364/OE.381471
• K. Gallacher et al., Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides, Optics Express 28 (4), 4786 (2020), https://doi.org/10.1364/OE.384993
• C. Ciano et al., Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models, Photonics 7 (1), 2 (2020), https://doi.org/10.3390/photonics7010002
• T. Grange et al., Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering, Phys. Rev. Applied 13, 044062 (2020), https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.13.044062 
• L. Persichetti et. al., Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells, Crystals 10(3), 179 (2020); Crystals | Free Full-Text | Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells, https://doi.org/10.3390/cryst10030179

Tohoku University:

• W. Li et al., Electron-cyclotron resonance Ar plasma-induced electrical activation of B atoms without substrate heating in B doped Si epitaxial films on Si(100), Material Science in Semiconductor Processing 107, 104823 (2020), https://www.sciencedirect.com/science/article/pii/S1369800119320104?via%3Dihub

University of Milano-Bicocca (UNIMIB): 

• E. Vitiello et al., Magneto-optical determination of the carrier lifetime in coherent Ge(1-x)Sn(x)/Ge heterostructures, arXiv:2009.01087, https://arxiv.org/abs/2009.01087
• J. Pedrini et al., Broadband control of the optical properties of semiconductors through site-controlled self-assembly of microcrystals, Optics express, 28, 24981 (2020), https://www.osapublishing.org/oe/abstract.cfm?uri=oe-28-17-24981

2019

Brandenburgische Technische Universität (BTU):

• J. Schlipf et al., Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy, J. Vac. Sci. Technol. B 37, 2166-2754 (2019), https://avs.scitation.org/doi/10.1116/1.5122777

CEA-LETI:

• M. Mastari et al., SiGe nano-heteroepitaxy: An investigation of the nano-template, Journal of Crystal Growth 527, 125232 (2019). https://doi.org/10.1016/j.jcrysgro.2019.125232
• F.T. Armand Pilon et al., Lasing in strained germanium microbridges, Nature Communications 10, 2724 (2019). https://www.nature.com/articles/s41467-019-10655-6
• J. Chrétien et al., GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain, ACS Photonics 6, 2462 (2019). https://pubs.acs.org/doi/10.1021/acsphotonics.9b00712
• S. Barraud et al., Top-down fabrication and electrical characterization of Si and SiGe nanowires for advanced CMOS technologies, Semiconductor Science and Technology 34, 074001 (2019). https://iopscience.iop.org/article/10.1088/1361-6641/ab1e5b
• D. Benedikovic et al., 25  Gbps low-voltage hetero-structured silicon-germanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures, Photonics Research 7, 437 (2019). https://doi.org/10.1364/PRJ.7.000437
• V. Mazzocchi et al., 99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits, Journal of Crystal Growth 509, 1 (2019). https://doi.org/10.1016/j.jcrysgro.2018.12.010
• P.E. Raynal et al., GeSn surface preparation by wet cleaning and in-situ plasma treatments prior to metallization, Microelectronic Engineering 203–204, 38 (2019). https://doi.org/10.1016/j.mee.2018.11.005
• M. Mastari et al., Nano-Heteroepitaxy: An Investigation of SiGe Pillars Coalescence, ECS J. Solid State Sci. Technol. 8, P180 (2019). http://jss.ecsdl.org/content/8/3/P180
• L. Dagault et al.,, Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers, ECS J. Solid State Sci. Technol. 8, P202 (2019). http://jss.ecsdl.org/content/8/3/P202

CINTECX (University of VIGO):

• M. C. J.Weiser et al., Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy, IEEE Proceedings MIPRO (2019) 1-6, DOI: 10.23919/MIPRO.2019.8756640, ISSN: 2623-8764, https://ieeexplore.ieee.org/document/8756640
• J. Schlipf et al. Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy, J. of Vacuum Science and Technology B: Nanotechnology and Microelectronics B 37, 061213 (2019) 1-6, https://doi.org/10.1116/1.5122777¨

Eindhoven University of Technology (TUE):

• S. Assali et al., Strain engineering in Ge/GeSn core/shell nanowires, APPLIED PHYSICS LETTERS. 115 (11), 113102 (2019), https://aip.scitation.org/doi/10.1063/1.5111872
• Y. Ren et al., Hexagonal silicon grown from higher order silanes, NANOTECHNOLOGY 30 (29), 295602 (2019), https://iopscience.iop.org/article/10.1088/1361-6528/ab0d46
• J. Ridderbos et al., Hard Superconducting Gap and Diffusion-Induced Superconductors in Ge-Si Nanowires, NANO LETTERS 20 (1), 122-130 (2019) , https://pubs.acs.org/doi/10.1021/acs.nanolett.9b03438
• J. Ridderbos et al., Multiple Andreev reflections and Shapiro steps in a Ge-Si nanowire Josephson junction, PHYSICAL REVIEW MATERIALS 3 (8), 084803 (2019), https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.3.084803

IHP:

• F. Bärwolf et al., Dynamic SIMS, spectroscopic ellipsometry and x-ray diffractometry analysis of SiGe HBTs with Ge grading, Semicond. Sci. Technol. 34 (2019) 014005, https://iopscience.iop.org/article/10.1088/1361-6641/aaf3e2\
• Y. Yamamoto et al., Self-Ordered Ge Nanodot Fabrication by using Reduced Pressure Chemical Vapor Deposition, ECS Journal of Solid State Science and Technology, 8 (3) P190 (2019), http://jss.ecsdl.org/content/8/3/P190.full?sid=22eef9a6-fb16-4047-a61b-40eddd174543
• J. Allerbeck et al., Ultrafast carrier recombination in highly n-doped Ge-on-Si films.  Applied Physics Letters 114, 241104 (2019) https://aip.scitation.org/doi/full/10.1063/1.5088012

IMB-CNM-CSIC:

• M. Cabello, et al., Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs, Materials Science in Semiconductor Processing 93, 357-359 (2019), https://www.sciencedirect.com/science/article/pii/S1369800118319309
• E. Masvidal-Codina, et al., High-resolution mapping of infraslow cortical brain activity enabled by graphene microtransistors, Nature Materials 18, 280-299 (2019), https://www.nature.com/articles/s41563-018-0249-4
• V. Banu, M. Popescu, P. Godignon, Delta Reference, the Latest High Temperature Compensated Voltage Reference Concept, European Space Power Conference (ESPC) Juan-les-Pins, FRANCE SEP 30-OCT 04, 2019

Imec:

• P. Eyben et al., 3D-carrier Profiling and Parasitic Resistance Analysis in Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors, IEDM-2019, pp. 11.3.1-11.3.4, doi: 10.1109/IEDM19573.2019.8993636, https://ieeexplore.ieee.org/document/8993636
• H. Arimura et al., Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si, IEDM-2019  pp. 29.2.1-29.2.4, doi: 10.1109/IEDM19573.2019.8993467, https://ieeexplore.ieee.org/abstract/document/8993467 
• A. Veloso et al., Vertical Nanowire and Nanosheet FETs: Device Features, Novel Schemes for Improved Process Control and Enhanced Mobility, Potential for Faster & More Energy Efficient Circuits, IEDM-2019, pp. 11.1.1-11.1.4, doi: 10.1109/IEDM19573.2019.8993602, https://ieeexplore.ieee.org/document/8993602  
• H. Arimura et al., A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation, 2019 Symposium on VLSI Technology, p. T92, doi: 10.23919/VLSIT.2019.8776535, https://ieeexplore.ieee.org/document/8776535 
• E. Capogreco et al.,, High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-Jtlnm LG, 2019 Symposium on VLSI Technology, p. T94, doi: 10.23919/VLSIT.2019.8776558, https://ieeexplore.ieee.org/abstract/document/8776558  
• A. Vandooren et al., Buried metal line compatible with 3D sequential integration for top tier planar devices dynamic Vth tuning and RF shielding applications, 2019 Symposium on VLSI Technology, p. T56, doi: 10.23919/VLSIT.2019.8776490, https://ieeexplore.ieee.org/document/8776490 
• H. Arimura et al. Record GmSAT/SSSAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation,  IEEE Transactions on Electron Devices 66 (12), 5387 (2019), https://ieeexplore.ieee.org/document/8897623
• P. Favia et al., TEM investigations of Gate-All-Around Nanowire Devices, IOP Semiconductor Science and Technology 34 (12), P.124003 (2019), https://iopscience.iop.org/article/10.1088/1361-6641/ab4b8b 
• A. Vohra et al., Heavily phosphorus doped germanium: strong relationship of phosphorus with vacancies and impact of Sn alloying on doping activation, Journal of Applied Physics 125 (22), 225703 (2019), https://aip.scitation.org/doi/full/10.1063/1.5107503 (Editors Pick's Article)
• A. Vohra et al., Evolution of phosphorus-vacancy clusters in germanium, Journal of Applied Physics 125 (2), 025701 (2019), https://aip.scitation.org/doi/10.1063/1.5054996
• C. Porret et al., Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration: ECS Journal of Solid State Science and Technology 8 (8), P392 (2019), http://jss.ecsdl.org/content/8/8/P392.full.pdf+html?sid=92c0d2ea-3527-4ae1-895c-44904fc02a9
• A. Vohra et al., Low temperature Ge:B and GeSn:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide & nitride with no need for any post-epi activation treatment, Japanese Journal of Applied Physics 58, SBBA04-1 (2019), https://iopscience.iop.org/article/10.7567/1347-4065/ab027b/meta (Spotlights 2019 + listed as Highlighs of 2019)
• A. Hikavyy et al., Application of Cl₂ for low temperature etch and epitaxy, Semiconductor Science and Technology 34 (7), 074003 (2019), https://iopscience.iop.org/article/10.1088/1361-6641/aafc93
• S. Dhayalan et al., Insights into the C distribution in Si:C/Si:C:P and the annealing behavior of Si:C layers, ECS Journal of Solid State Science and Technology 8 (4), P209 (2019), http://jss.ecsdl.org/content/8/4/P209.full.pdf+html?sid=92c0d2ea-3527-4ae1-895c-44904fc02a94

Kyushu Universiy: 

• K. Yamamoto et al., Conduction Type Control of Ge-on-Insulator: Combination of Smart-CutTM and Defect Elimination, ECS transactions 93 (1), p. 73(2019) https://dx.doi.org/10.1149/09301.0073ecst
• K. Moto et al., Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass, Appl. Phys. Lett. 114, p. 212107 (2019), https://doi.org/10.1063/1.5093952
• K. Yamamoto et al., Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation, Jpn. J. Appl. Phys. 58, p. SBBA14 (2019), https://doi.org/10.7567/1347-4065/ab02e3
• T. Maekura et al., Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate, Jpn. J. Appl. Phys., 58, p. SBBE05 (2019), https://doi.org/10.7567/1347-4065/aafb5e

Nagoya University: 

• S. Miyazaki et al., Photoemission-based Characterization of Gate Dielectrics and Stack Interfaces, ECS Transactions 92 (4) 11 (2019), https://iopscience.iop.org/article/10.1149/09204.0011ecst
• S.Fujimori et al, Effect of H2-dilution in Si-cap formation on photoluminescence intensity of Si quantum dots with Ge core, Japanese Journal of Applied Physics 58 SIIA01 (2019), https://doi.org/10.7567/1347-4065/ab0c7a
• S. Miyazaki et al., Photoemission Characterization of Interface Dipoles and Electronic Defect States for Gate Dielectrics, ECS Transactions 90 (1) 113 (2019), https://doi.org/10.1149/09001.0113ecst
• M. Kurosawa et al., Synthesis of heavily Ga-doped Si_1−xSn_x/Si heterostructures and their valence-band-offset determination, Japanese Journal of Applied Physics. 58, SAAD02 (4 pages) (2019), https://doi.org/10.7567/1347-4065/aaeb36
• Y. Miki et al., Influence of Sn precursors on Ge_1−xSn_x growth using metal-organic chemical vapor deposition, Japanese Journal of Applied Physics 58, SAAD07 (7 pages) (2019), https://doi.org/10.7567/1347-4065/aaec1a
• K. Takahashi et al., Operation of thin-film thermoelectric generator of Ge-rich poly-Ge_1-xSn_x on SiO₂ fabricated by a low thermal budget process, Applied Physics Express 12 (5), 051016 (5 pages) (2019), https://doi.org/10.7567/1882-0786/ab1969
• M. Fukuda et al., Formation and Optoelectronic Property of Strain-relaxed Ge_1−x–ySi_xSn_y/Ge_1−xSn_x/Ge_1−x–ySi_xSn_y Double Heterostructures on Boron-Ion-Implanted Ge(001) Substrate, Japanese Journal of Applied Physics 58, SIIB23 (2019), https://doi.org/10.7567/1347-4065/ab1b62
• Y. Peng et al., Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si_1-x-yGe_xSn_y Thin Films with Boron Ion Implantation, Scientific Reports 9, 14342 (9 pages) (2019), https://doi.org/10.1038/s41598-019-50754-4

National Taiwan University: 

• Yu-Shiang Huang et al., First Stacked Ge_0.88Sn_0.12 pGAAFETs with Cap, L_G=40nm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record I_ON of 58μA at V_OV=V_DS= -0.5V, Record G_m,max of 172μS at V_DS= -0.5V, and Low Noise, p. 689, International Electron Devices Meeting (IEDM), 2019.
• Chien-Te Tu et al., First Vertically Stacked Tensily Strained Ge_0.98Si_0.02 nGAAFETs with No Parasitic Channel and L_G = 40 nm Featuring Record I_ON = 48 μA at V_OV=V_DS=0.5V and Record G_m,max(μS/μm)/SS_SAT(mV/dec) = 8.3 at V_DS=0.5V, p. 681, International Electron Devices Meeting (IEDM), 2019.
• Min-Hung Lee et al., Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf_0.25Zr_0.75O₂ Negative Capacitance FETs, p. 566, International Electron Devices Meeting (IEDM), 2019.

POLYTECHNIQUE MONTREAL:

• S. Assali et al., Vacancy complexes in nonequilibrium germanium-tin semiconductors, Applied Physics Letters 114, 251907 (2019), DOI: https://doi.org/10.1063/1.5108878 
• M. Fortin-Deschênes et al., Dynamics of Antimonene-Graphene van der Waals Growth, Advanced Materials 31, 1900569 (2019), DOI: https://doi.org/10.1002/adma.201900569
• R. M. Jacobberger et al., Alignment of semiconducting graphene nanoribbons on vicinal Ge(001), Nanoscale 14, 4864 (2019), DOI: https://doi.org/10.1039/C9NR00713J
• S. Assali et al., Enhanced Sn incorporation in GeSn epitaxial layers via strain relaxation, Journal of Applied Physics 125, 025304 (2019), DOI: https://doi.org/10.1063/1.5050273

QuTech (TU Delft): 

• M. Lodari et al., Light effective hole mass in undoped Ge/SiGe quantum wells.
  Physical Review 100, 041304(R) (2019), https://journals.aps.org/prb/abstract/10.1103/PhysRevB.100.041304
• D. Sabbagh et al., Quantum Transport Properties of Industrial ²⁸Si/²⁸SiO₂.
  Physical Review Applied 12, 014013 (2019), https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.12.014013
• G. Zheng et al., Rapid gate-based spin read-out in silicon using an on-chip resonator.
  Nature Nanotechnology 14, 742 (2019), https://doi.org/10.1038/s41565-019-0488-9
• N.W. Hendrickx et al., Ballistic supercurrent discretization and micrometer-long Josephson coupling in germanium, Physical Review B 99, 075435 (2019), https://journals.aps.org/prb/abstract/10.1103/PhysRevB.99.075435
• F. Vigneau et al., Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers, Nano Letters 19, 1023 (2019), https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.8b04275
• A. Sammak et al., Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology, Advanced Functional Materials 29, 1807613 (2019), https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201807613
• R. Pillarisetty et al., Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology, Technical Digest-International Electron Devices Meeting, IEDM (2019), https://ieeexplore.ieee.org/abstract/document/8614624/

Research Center Juelich - Peter Gruenberg Institute:

• N. von den Driesch et al., Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters, Solid State Electronics 155, 139 (2019)   https://dx.doi.org/10.1016/j.sse.2019.03.013
• D. Rainko et al., Impact of tensile strain on low Sn content GeSn lasing, Scientific Reports 9 (1), 259 (2019), https://dx.doi.org/10.1038/s41598-018-36837-8

Roma Tre: 

• C. Ciano et. al.,  n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser. ECS Transactions 93, 63 (2019) http://ecst.ecsdl.org/content/93/1/63
• T. Grange et. al.,  Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions.  Applied Physics Letters 114, 111102 (2019)  https://aip.scitation.org/doi/10.1063/1.5082172
• C. Ciano et. al.,  Control of Electron State Coupling in Asymmetric Ge/GeSi Quantum Wells., Physical Review Applied 11, 014003 (2019) https://doi.org/10.1103/PhysRevApplied.11.014003
• L. Persichetti et al., Abrupt changes in the graphene on Ge(001) system at the onset of surface melting, Carbon 145, 345 (2019) https://www.sciencedirect.com/science/article/pii/S0008622319300430

University of Milano-Bicocca (UNIMIB):

• F. Rovaris et al., Dynamics of crosshatch patterns in heteroepitaxy, Phys. Rev. B 100, 085307 (2019), https://doi.org/10.1103/PhysRevB.100.085307
• E. Scalise et al., Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments, Phys. Rev. Appl. 12, 021002 (2019). https://doi.org/10.1103/PhysRevApplied.12.021002
• M. Albani et al., Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling, Phys. Stat. Sol. B 256, 1800518 (2019). https://doi.org/10.1002/pssb.201800518

• S. De Cesari et al., Spin-coherent dynamics and carrier lifetime in strained Ge_1-xSn_x semiconductors on silicon. Physical Review B 99, 035202 (2019), https://journals.aps.org/prb/abstract/10.1103/PhysRevB.99.035202

2018

CEA-LETI:

• R. Khazaka et al., Growth and characterization of SiGeSn pseudomorphic layers on 200 mm Ge virtual substrates, Semiconductor Science and Technology 33, 124011 (2018). https://iopscience.iop.org/article/10.1088/1361-6641/aaea32
• V. Boureau et al., Lattice contraction due to boron doping in silicon, Materials Science in Semiconductor Processing 87, 65 (2018). https://doi.org/10.1016/j.mssp.2018.07.011
• Quang Minh Thai et al., GeSn heterostructure micro-disk laser operating at 230 K, Optics Express 26, 32500 (2018). https://doi.org/10.1364/OE.26.032500
• J.M. Hartmann, Impact of Si precursor mixing on the low temperature growth kinetics of Si and SiGe, Semiconductor Science and Technology 33, 104002 (2018). https://iopscience.iop.org/article/10.1088/1361-6641/aad8d2/pdf
• A. Quintero et al., Impact of Pt on the phase formation sequence, morphology, and electrical properties of Ni(Pt)/Ge0.9Sn0.1 system during solid-state reaction, Journal of Applied Physics 124, 085305 (2018). https://doi.org/10.1063/1.5040924
• M. Mastari et al., SiGe nano-heteroepitaxy on Si and SiGe nano-pillars, Nanotechnology 29, 275702 (2018). https://iopscience.iop.org/article/10.1088/1361-6528/aabdca/pdf
• J.M. Hartmann and J. Aubin, Assessment of the growth/etch back technique for the production of Ge strain-relaxed buffers on Si, Journal of Crystal Growth 488, 43 (2018). https://doi.org/10.1016/j.jcrysgro.2018.02.036
• P.E. Raynal et al., Wet and Siconi® cleaning sequences for SiGe p-type metal oxide semiconductor channels, Microelectronic Engineering 187–188, 84 (2018). https://doi.org/10.1016/j.mee.2017.12.003
• C. Bellegarde et al., Improvement of Sidewall Roughness of Submicron SOI Waveguides by Hydrogen Plasma and Annealing, IEEE Photonics Technology Letters 30, 591 (2018). https://doi.org/10.1109/LPT.2018.2791631
• M. Sinobad et al., Mid-infrared octave spanning supercontinuum generation to 8.5  μm in silicon-germanium waveguides, Optica 5, 360 (2018). https://doi.org/10.1364/OPTICA.5.000360
• J.M. Fedeli et al., Mid-InfraRed platforms for chemical sensing, 2018 IEEE 15th International Conference on Group IV Photonics (GFP), p. 135. https://ieeexplore.ieee.org/document/8478756
• J. Aubin and J.M. Hartmann, GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4, Journal of Crystal Growth 482, 30 (2018). https://doi.org/10.1016/j.jcrysgro.2017.10.030
• J.M. Hartmann et al., A Benchmark of 300mm RP-CVD Chambers for the Low Temperature Epitaxy of Si and SiGe, ECS Transactions 86 (7), 219 (2018). http://ecst.ecsdl.org/content/86/7/219
• R. Khazaka et al., Investigation of the Growth of Si-Ge-Sn Pseudomorphic Layers on 200 mm Ge Virtual Substrates: Impact of Growth Pressure, HCl and Si2H6 Flows, ECS Transactions 86 (7), 207 (2018). http://ecst.ecsdl.org/content/86/7/207
• V. Mazzocchi et al., Benchmark of Disilane and Liquid Si for the Low Temperature Epitaxial Growth of Si, SiGe and SiGeB, ECS Transactions 86 (7), 177 (2018). http://ecst.ecsdl.org/content/86/7/177

Eindhoven University of Technology (TUE): 

• M. Albani et al., Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires, NANOSCALE 10 (15), 7250-7256 (2018), https://pubs.rsc.org/en/content/articlelanding/2018/nr/c7nr09568f#!divAbstract
• J. Ridderbos et al., Josephson Effect in a Few-Hole Quantum Dot, ADVANCED MATERIALS 30 (44), 1802257 (2018), https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201802257
• F. de Vries et al., Spin-Orbit Interaction and Induced Superconductivity in a One-Dimensional Hole Gas, NANO LETTERS 18 (10), 6483-6488 (2018), https://pubs.acs.org/doi/10.1021/acs.nanolett.8b02981
• F. Froning et al., Single, double, and triple quantum dots in Ge/Si nanowires, APPLIED PHYSICS LETTERS 113 (7), 073102 (2018), https://aip.scitation.org/doi/10.1063/1.5042501

IHP:

• D. Wolansky et al., Impact of nickel silicide on SiGe BiCMOS devices, Semicond. Sci. and Technol. 33 124003 (2018), https://iopscience.iop.org/article/10.1088/1361-6641/aae612
• Y. Yamamoto et al., Influence of annealing conditions on threading dislocation density in Ge deposited on Si by reduced pressure chemical vapor deposition, Semicond. Sci. and Technol. 33 124007 (2018), https://iopscience.iop.org/article/10.1088/1361-6641/aae574
• Y. Yamamoto et al., Alignment control of self-ordered three dimensional SiGe nanodots, Semicond. Sci. and Technol. 33 114014 (2018), https://iopscience.iop.org/article/10.1088/1361-6641/aae62d
• H. Rücker et al., High-performance SiGe HBTs for next generation BiCMOS technology Semicond. Sci. and Technol. 33 114003 (2018), https://iopscience.iop.org/article/10.1088/1361-6641/aade64
• V. Schlykow, Photoluminescence from GeSn nano-heterostructures, Nanotechnology 29 415702 (2018), https://iopscience.iop.org/article/10.1088/1361-6528/aad626
• C. Baristiran Kaynak et al., High Performance Thermistor Based on Si_1−xGe_x/Si Multi Quantum Wells, IEEE Electron Device Letters 39 (5) 753 (2018), https://ieeexplore.ieee.org/document/8329244
• P. Zaumseil et al.,  The thermal stability of epitaxial GeSn layers,  Applied Physics Letters Materials 6, 076108 (2018) https://aip.scitation.org/doi/10.1063/1.5036728
• M. Bettenhausen et al., Germanium Plasmon Enhanced Resonators for Label-Free Terahertz Protein Sensing.  Frequenz  72, 113 (2018) https://www.degruyter.com/view/j/freq.2018.72.issue-3-4/freq-2018-0009/freq-2018-0009.xml
• M. Salvalaglio et al.,  Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instability,  Applied Physics Letters 112, 022101 (2018) https://aip.scitation.org/doi/full/10.1063/1.5007937

IMB-CNM-CSIC:

• V. Soler et al., Complementary p-Channel and n-Channel SiC MOSFETs for CMOS Integration, Material Science Forum 924, pp.975-979 (2018)
• O. Loto, et al., Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors, IEEE Transactions on Electron Devices 65, 3361-3364 (2018), https://ieeexplore.ieee.org/document/8399540
• M. Cabello, et al., Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review, Materials Science in Semiconductor Processing 78, 22-31 (2018), https://www.sciencedirect.com/science/article/pii/S1369800117318978
• F. Roccaforte and P. Godignon, Wide band gap semiconductors technology for next generation of energy efficient power electronics, Editorial of Special Issue Materials Science in Semiconductor Processing 78, 1-1 (2018), https://www.sciencedirect.com/science/article/pii/S136980011830101X
• C. Hebert, et al., Flexible Graphene Solution-Gated Field-Effect Transistors: Efficient Transducers for Micro-Electrocorticography, Advanced Functional Materials 28, 1703976, (2018), https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.201703976
• J.M. Rafí, et al., Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: electrical characterization and electron irradiation effects, Journal of Instrumentation 13, C01045, (2018), https://iopscience.iop.org/article/10.1088/1748-0221/13/01/C01045

Imec:

• R. Loo et al., Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures, ECS Journal of Solid State Science and Technology 7 (2), P6 (2018), http://jss.ecsdl.org/content/7/2/P66.full.pdf+html?sid=92c0d2ea-3527-4ae1-895c-44904fc02a94
• E. Capogreco et al., First demonstration of vertically stacked gate-all-around highly strained germanium nanowire pFETs, IEEE Transactions on Electron Devices 65 (11), 5145 (2018), https://ieeexplore.ieee.org/document/8489968
• A. Schulze et al., Non-destructive characterization of extended crystalline defects in confined semiconductor device structures, Nanoscale 10 (15), 7058 (2018), http://pubs.rsc.org/en/content/articlelanding/2018/nr/c8nr00186c#!divAbstract
• A. Srinivasan et al., Carrier scattering induced linewidth broadening in in-situ P-doped Ge layers on Si, Applied Physics Letters 113 (16), 161101 (2018), https://aip.scitation.org/doi/10.1063/1.5040153
• R. Loo et al., Epitaxial GeSn: Impact of process conditions on material quality, IOP Semiconductor Science and Technology 33 (11), 114010 (2018), https://doi.org/10.1088/1361-6641/aae2f9
• S. Gupta et al., Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si, Applied Physics Letters 113 (19), 192103 (2018), https://doi.org/10.1063/1.5048683
• S. Gupta et al., Electrical properties of extended defects in strain relaxed GeSn, Applied Physics Letters 113 (2), 022102 (2018), https://aip.scitation.org/doi/10.1063/1.5034573
• S. Dhayalan et al., On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si:P Epitaxial Films for Source-Drain Stressor Applications, ECS Journal of Solid State Science and Technology 7 (5), P228 (2018), http://jss.ecsdl.org/content/7/5/P228.full.pdf+html?sid=92c0d2ea-3527-4ae1-895c-44904fc02a94

Kyushu University: 

• W.-C. Wen et al., Border trap evaluation for SiO₂/GeO₂/Ge gate stacks using deep-level transient spectroscopy J. Appl. Phys., 124, (20), p. 205303 (2018), https://doi.org/10.1063/1.5055291
• K. Yamamoto et al., Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition, Semiconductor Science and Technology, 33, p. 114011 (2018), https://doi.org/10.1088/1361-6641/aae4bd

Nagoya University:

• R. Nagai et al., Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core, Semiconductor Science and Technology 33 124021 (2018), https://doi.org/10.1088/1361-6641/aaebbc
• Y. Futamura et al., Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy, Japanese Journal of Applied Physics 58 SAAE01 (2018), https://doi.org/10.7567/1347-4065/aaeb38
• H. Zhang et al., High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots, ECS Transactions 86 (7), 131 (2018), doi:10.1149/08607.0131ecst
• Y. Wen et al., Formation of Mn-germanide nanodots on ultrathin SiO2 induced by remote hydrogen plasma, Japanese Journal of Applied Physics 57 01AF05 (2018), https://doi.org/10.7567/JJAP.57.01AF05
• K. Ito et al., Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N₂ ambient, Japanese Journal of Applied Physics 57 06HD08 (2018), https://doi.org/10.7567/JJAP.57.06HD08
• K. Ito et al., Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si+Ge) compositions, Japanese Journal of Applied Physics 57, 04FJ05 (2018), https://iopscience.iop.org/article/10.7567/JJAP.57.04FJ05
• K. Makihara et al., Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection, Applied Physics Express 11, 011305 (2018), https://doi.org/10.7567/APEX.11.011305
• S. Ike et al., Epitaxial growth of heavily doped n⁺-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping, Thin Solid films 645 (1), 57-63 (2018), https://doi.org/10.1016/j.tsf.2017.10.013
• W. Takeuchi et al., Selective growth of Ge_1-xSn_x epitaxial layer on patterned SiO₂/Si substrate by metal-organic chemical vapor deposition, Japanese Journal of Applied Physics 57 (1S), 01AC05 (5 pages) (2018), https://doi.org/10.7567/JJAP.57.01AC05
• K. Takahashi et al., High n-type Sb dopant activation in Ge-rich poly-Ge1−xSnx layers on SiO2 using pulsed laser annealing in flowing water, Applied Physics Letters 112, 062104 (4 pages) (2018), https://doi.org/10.1063/1.4997369
• K. Takahashi et al., Dopant behavior in heavily doped polycrystalline Ge_1−xSn_x layers prepared with pulsed laser annealing in water, Japanese Journal of Applied Physics 57 (4S), 04FJ02 (6 pages) (2018), https://doi.org/10.7567/JJAP.57.04FJ02
• A. Suzuki et al., Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched Si_xGe_1−x−ySn_y ternary alloy interlayer on Ge, Japanese Journal of Applied Physics 57 (6), 07MA05 (5 pages) (2018), https://doi.org/10.7567/JJAP.57.060304
• O. Nakatsuka et al., Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties, Japanese Journal of Applied Physics 57 (7S2), 060304 (4 pages) (2018), https://doi.org/10.7567/JJAP.57.07MA05
• J. Jeon et al., Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n⁺-Ge_1−xSn_x structure, Semiconductor Science and Technology 33 (12), 124001 (2018), https://doi.org/10.1088/1361-6641/aae624
• M. Fukuda et al., Optoelectronic properties of high-Si-content-Ge_1−x–ySi_xSn_y/Ge_1−xSn_x/Ge_1−x–ySi_xSn_y double heterostructure, Semiconductor Science and Technology 33 (12), 124018 (8 pages) (2018), https://doi.org/10.1088/1361-6641/aaebb5
• J. Jeon et al., Growth and electrical properties of in situ Sb-doped Ge_1−xSn_x epitaxial layers for source/drain stressor of strained-Ge transistors, Japanese Journal of Applied Physics 57 (12), 121303 (6 pages) (2018), https://doi.org/10.7567/JJAP.57.121303

QuTech (TU Delft):

• N.W. Hendrickx et al., Gate-controlled quantum dots and superconductivity in planar germanium, Nature Communications 9, 2835 (2018). https://www.nature.com/articles/s41467-018-05299-x
• N. Samkharadze et al., Strong spin-photon coupling in silicon, Science 359, 1123 (2018), https://doi.org/10.1126/science.aar4054

Research Center Juelich - Peter Gruenberg Institute:

• D. Rainko et al., Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures, Scientific Reports 8 (1), 15557 (2018), https://dx.doi.org/10.1038/s41598-018-33820-1
• D. Stange et al., GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers, ACS Photonics 5, 4628 (2018), https://dx.doi.org/10.1021/acsphotonics.8b01116
• N. von den Driesch et al., (Invited) Epitaxy of Direct Bandgap Group IV Si-Ge-Sn Alloys towards Heterostructure Light Emitters, ECS Transactions 86 (7), 189 (2018), http://ecst.ecsdl.org/content/86/7/189.full.pdf+html?sid=b3b5e8ef-d955-4c55-82e6-4622fbc3fd93
• N. von den Driesch et al., Advanced GeSn/SiGeSn Group IV Heterostructure Lasers, Advanced Science, 1700955 (2018), https://onlinelibrary.wiley.com/doi/full/10.1002/advs.201700955

Roma Tre: 

• M. Montanari et. al., Photoluminescence study of inter-band transitions in few, pseudomorphic and strain-unbalanced Ge/GeSi multiple quantum wells, Physical Review B 98, 195310 (2018) https://doi.org/10.1103/PhysRevB.98.195310.
• L. Di Gaspare et al. Early stage of CVD graphene synthesis on Ge(001) substrate,  Carbon 134, 183  (2018) https://www.sciencedirect.com/science/article/pii/S0008622318303439
• L. Persichetti, et al. Formation of extended thermal etch pits on annealed Ge wafers, Applied Surface Science 462, 86 (2018). 10.1016/j.apsusc.2018.08.075.

Shizuoka University:

• J. Utsumi, et al., Reduced Thermal Conductivity of Ge1-xSnx Layer Formed on Self-assembled Sn Nanodots Template, Semicond. Sci. Technol. 33, 124004-1-124004-7 (2018), https://iopscience.iop.org/article/10.1088/1361-6641/aadc00

Tohoku University:

• J. Murota et al., Atomically controlled processing for dopant segregation in CVD Si and Ge epitaxial growth, ECS Journal of Solid State Science and Technology 7 (6), P305 (2018), http://jss.ecsdl.org/content/7/6/P305.short

University of Milano-Bicocca (UNIMIB):

• F. Rovaris et al., Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back, Phys. Rev. Appl. 10, 054067 (2018). https://doi.org/10.1103/PhysRevApplied.10.054067
• F. Montalenti et al., Dislocation-Free SiGe/Si Heterostructures, Crystals 8, 257 (2018). https://doi.org/10.3390/cryst8060257
• S. De Cesari et al., Optically reconfigurable polarized emission in Germanium. Scientific Reports 8, 11119 (2018), https://www.nature.com/articles/s41598-018-29409-3.pdf