Conference Proceedings:

 

Journal Papers (list is updated regularly)

2022

 

Brandenburgische Technische Universität (BTU)

 

HZDR 

 

IHP

  

 

National Taiwan University 

  • Y.-R. Chen et al., ION Enhancement of Ge0.98Si0.02 Nanowire nFETs by High-k Dielectrics, IEEE Electron Device Letters 43 (10), pp. 1601-1604 (2022)
  • Y.-J. Tsou et al., Demonstration of High Endurance and Retention Spin-Transfer-Torque-Assisted Field-Free Perpendicular Spin-Orbit Torque Cells by an Etch-Stop-on-MgO Process, IEEE Electron Device Letters 43 (10), pp. 1661-1664 (2022) 
  • C.-J. Tsen et al., Self-Heating Mitigation of TreeFETs by Interbridges, IEEE Transactions on Electron Devices 69 (8), pp. 4123-4128 (2022) 
  • C.-C. Chung et al., Self-Heating of FinFET Circuitry Simulated by Multi-Correlated Recurrent Neural Networks IEEE Electron Device Letters 43 (8), pp. 1179-1182 (2022) 
  • H.-C. Lin et al., RF Performance of Stacked Si Nanosheets/Nanowires, IEEE Electron Device Letters 43 (7), pp. 1017-1020 (2022) 
  • Y.-R. Chen et al., Multi-VT of Stacked GeSn Nanosheets by ALD WNxCy Work Function Metal, IEEE Transactions on Electron Devices. 69 (7), pp. 3611-3616 (2022) 
  • A. A. Shashkin et al., Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system, Scientific Reports, pp. 5080 (2022) 
  • Yun-Wen Chen and C. W. Liu, Boost of orthorhombic population with amorphous SiO2 interfacial layer – A DFT study, Semicond. Sci. Technol. 37 (5), pp. 05LT01, (2022) 
  • C.-T. Tu et al., Experimental Demonstration of TreeFETs Combining Stacked Nanosheets and Low Doping Interbridges by Epitaxy and Wet Etching, IEEE Electron Device Letters 43 (5), pp. 682-685 (2022) 
  • Bo-Wei Huang et al., Highly Stacked GeSn Nanosheets by CVD Epitaxy and Highly Selective Isotropic Dry Etching, IEEE Transactions on Electron Devices 69 (4), pp. 2130-2136 (2022) 
  • Chun-Hung Yeh et al., Electrical Measurements to Detect Liquid Concentration, IEEE Transactions on Semiconductor Manufacturing 35 (1), pp. 11-15 ( 2022)
  • Chien-Te Tu et al., First Demonstration of Monolithic 3D Self-aligned GeSi Channel and Common Gate Complementary FETs by CVD Epitaxy Using Multiple P/N Junction Isolation, accepted by International Electron Devices Meeting (IEDM), 2022.
  • Yi-Chun Liu et al., Highly Stacked Ge0.95Si0.05 Nanowire nFETs Featuring High ION=140μA (6500μA/μm) at VOV=VDS=0.5V by Low Temperature Epitaxy and Wet Etching, accepted by 53rd IEEE Semiconductor Interface Specialists Conference (SISC 2022)
  • (invited) C. W. Liu et al., Stacked Nanosheet FETs and Beyond, 242nd ECS Meeting, Atlanta, GA, USA, October 9-13, 2022
  • Chung-En Tsai et al., Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies, Symposium on VLSI Technology and Circuits (VLSI), JUNE 13-17, 2022
  • Wan-Hsuan Hsieh et al., Recovery of Boron Activation and Epitaxial Breakdown in Heavily B-doped Ge Epilayers by In-situ CVD Doping, E-MRS Spring Meeting, May 30 – June 3, 2022
  • Wan-Hsuan Hsieh et al., Diffusion and Segregation in Highly Stacked Ge0.9Sn0.1/Ge:B and Ge0.95Si0.05/Ge:P Epilayers, 241st ECS Meeting, Vancouver, BC, Canada, May 29 – June 2, 2022
  • Chun-Yi Cheng et al., 6 Stacked Ge0.95Si0.05 nGAAFETs without Parasitic Channels by Wet Etching,2022 Int. Symp. on VLSI Technology, Systems and Application (VLSI-TSA), 2022
  • Tao Chou et al., Cell Stability and Write Improvement of 2T (Footprint) Stacked SRAM, 2022 Int. Symp. on VLSI Technology, Systems and Application (VLSI-TSA), 2022 
  • Hsin-Cheng Lin et al., RF Performance Optimization of Stacked Si Nanosheet nFETs, 2022 Int. Symp.on VLSI Technology, Systems and Application (VLSI-TSA), 2022

 

Research Center Juelich - Peter Gruenberg Institute

 

2021

 

AMO + R.W.T.H. Aachen (Center for Micro and Nanoelectronic Systems - MINAS)

 

Brandenburgische Technische Universität (BTU)

 

Eindhoven University of Technology (TUE)

 

IHP

 

IKZ

 

Imec

 

Kyushu University

 

Nagoya University (see also here and here)

 

Nanyang Technological University - Nano Engineering Device Laboratory

  • Y.-Y. Zhang et al., High Performance Flexible Visible-Blind Ultraviolet Photodetectors with Two-Dimensional Electron Gas Based on Unconventional Release Strategy, ACS Nano, In press (2021)
  • S. An et al., High-Sensitivity and Mechanically Compliant Flexible Ge Photodetectors with a Vertical p–i–n Configuration, ACS Applied Electronic Materials, In press (2021)
  • Y.-Y. Zhang et al., Anti-reflective porous Ge by open-circuit and lithography-free metal-assisted chemical etching, Applied Surface Science 546, 149083 (2021)
  • Z. Qiao et al., Lasing action in microdroplets modulated by interfacial molecular forces, Advanced Photonics 3(1), 016003 (2021)

 

National Taiwan University

  • D. Chen et al., Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure, Applied Physics Letters 119 (22), pp. 223103 (2021)
  • Jih-Chao Chiu et al., Performance Improvement by Double-Layer a-IGZO TFTs with a Top Barrier, IEEE Journal of the Electron Devices Society 10, pp. 45-50 (2021) 
  • Ya-Jui Tsou et al., Thermally-Robust Perpendicular SOT-MTJ Memory Cells with STT-Assisted Field-Free Switching, IEEE Transactions on Electron Devices 68 (12), pp. 6623-6628 (2021)
  • Yi-Chun Liu et al., Highly Stacked GeSi Nanosheets and Nanowires by Low-Temperature Epitaxy and Wet Etching, IEEE Transactions on Electron Devices 68 (12), pp. 6599-6604 (2021)
  • Chia-Che Chung et al., Architecture and Optimization of 2T (Footprint) SRAM, IEEE Transactions on Electron Devices 68 (10), pp. 4918-4924 (2021)  
  • Hsin-Cheng Lin et al., RF Performance of Stacked Si Nanosheet nFETs, IEEE Transactions on Electron Devices 68 (10), pp. 5277-5283 (2021) 
  • V. T. Dolgopolov et al., Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system, Phys. Rev. B 103 (16), pp. 161302 (2021)
  • (Highlight Paper) Yi-Chun Liu et al, First Highly Stacked Ge0.95Si0.05 nGAAFETs with Record ION = 110 uA (4100 uA/um) at VOV=VDS=0.5V and High Gm,max = 340 uS (13000uS/um) at VDS=0.5V by Wet Etching, Symposia on VLSI Technology and Circuits (VLSI), 2021 
  • Chung-En Tsai et al., First Demonstration of Multi-VT Stacked Ge0.87Sn0.13 Nanosheets by Dipole-Controlled ALD WNxCy Work Function Metal with Low Resistivity and Thermal Budget ≤ 400 °C, Symposia on VLSI Technology and Circuits (VLSI), 2021 
  • (Research Highlight) S. Thomas, Germanium nanowire transistors stack upNature Electronics 4, 452 (2021)
  • Chien-Te Tu et al., Uniform 4-Stacked Ge0.9Sn0.1 Nanosheets Using Double Ge0.95Sn0.05 Caps by Highly Selective Isotropic Dry Etch, IEEE Transactions on Electron Devices 68 (4), 2071 (2021)
  • (Invited) Yi-Chun Liu et al., Highly Stacked GeSi Nanosheets and Nanowires by Low Temperature Epitaxy and Wet Etching, submitted to IEEE Transactions on Electron Devices, (2021)
  • Shih-Ya Lin et al., A High ION/IOFF Ratio of 5.3x102 in Ge85Sn0.15 n+/p Junctions by Phosphorus Ion Implantation and Microwave Annealing, 52nd IEEE SISC, San Diego, CA, December 8-11, 2021
  • Wan-Hsuan Hsieh et al., Thermal Stability of Epitaxial GeSn Layers on Ge-buffered Si by CVD, 52nd IEEE SISC, San Diego, CA, December 8-11, 2021
  • (Best Student Paper Award Chung-En Tsai et al., Highly Stacked 8 Ge0.9Sn0.1 Nanosheet pFETs with Ultrathin Bodies (~3nm) and Thick Bodies (~30nm) Featuring the Respective Record ION/IOFF of 1.4x107 and Record ION of 92μA at VOV=VDS= -0.5V by CVD Epitaxy and Dry Etching, pp. 569-572, IEDM, 2021
  • (invited) Chien-Te Tu et al., GeSn/GeSi Stacked Channel Transistors, SSDM, Sept. 2021
  • Wei-Jen Chen et al., Critical Current Reduction of Field-Free Perpendicular SOT-MTJ by STT Assist Using Micromagnetic Simulation, SISPAD, 2021
  • (Highlight paper) Ya-Jui Tsou et al., First Demonstration of Interface-Enhanced SAF Enabling 400oC-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels, Symposia on VLSI Technology and Circuits (VLSI), 2021

 

POLYTECHNIQUE MONTREAL

 

QuTech (TU Delft)

 

 

Roma Tre

  • D. Stark et al., THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures, Applied Physics Letters 118, 101101 (2021)
  • M. Montanari et al. Terahertz intersubband absorption in Ge/SiGe parabolic quantum wells, Applied Physics Letters, in press, (2021) 

 

Shizuoka University

 

Tohoku University 

 

University of Milano-Bicocca (UNIMIB) (see also Materials and Lassem)

 

University of Technology Sydney (UTS)

 

 

2020

 

Aalto University

  • J. Slotte et al., In Situ Positron Annihilation Spectroscopy Analysis on Low Temperature Irradiated Semiconductors, Challenges and Possibilities, physica status solidi A, 2000232 (2020)
  • A. Khanam et al., A demonstration of donor passivation through direct formation of V-Asi complexes in As-doped Ge1−xSnx, J. Appl. Phys. 127, 195703 (2020)

 

AMO + R.W.T.H. Aachen (Center for Micro and Nanoelectronic Systems - MINAS)

 

Brandenburgische Technische Universität (BTU)

 

CEA-LETI

 

Eindhoven University of Technology (TUE)

 

HZDR

 

IHP

 

IKZ

 

 IMB-CNM-CSIC

 

Imec

 

Kyushu University

 

Nagoya University (see also here and here)

 

Nanyang Technological University - Nano Engineering Device Laboratory 

 

National Taiwan University

  • Yu-Shiang Huang et al., First Demonstration of Uniform 4-Stacked Ge9Sn0.1 Nanosheets with Record ION=73μA at VOV=VDS= -0.5V and Low Noise Using Double Ge0.95Sn0.05 Caps, Dry Etch, Low Channel Doping, and High S/D Doping, International Electron Devices Meeting (IEDM), pp. 23-26, 2020. 
  • Yu-Shiang Huang et al., First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoped Channels, Symposia on VLSI Technology and Circuits (VLSI), 2020, 
  • Chia-Che Chung et al., Interpretable Neural Network to Model and to Reduce Self-Heating of FinFET Circuitry, Symposia on VLSI Technology and Circuits (VLSI), 2020.
  • Fang-Liang Lu, Record Low Contact Resistivity to Ge:B (8.1x10-10Ω-cm2) and GeSn:B (4.1x10-10Ω-cm2) with Optimized [B] and [Sn] by In-situ CVD Doping, Symposia on VLSI Technology and Circuits (VLSI), 2020
  • Yi-Chun Liu et al., Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced Ion (1.7X at VOV = VDS = 0.5 V) by Ge0.85Si0.15 channels, Semicond. Sci. Technol., 35 (5), 055010 (2020)
  • Chung-En Tsai et al., Low Contact Resistivity to Ge Using In-situ B and Sn Incorporation by Chemical Vapor Deposition, IEEE Transactions on Electron Devices 67 (11), 5053 (2020)
  • Shih-Ya Lin et al., Optical Detection of Parasitic Channels of Vertically Stacked Ge0.98Si0.02 nGAAFETs, IEEE Transactions on Electron Devices 67 (10), 4073 (2020)
  • Hsiao-Hsuan Liu et al., Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors, IEEE Electron Device Letters  41 (1), 147 (2020)
  • A. A. Shashkin et al., Manifestation of strong correlations in transport in ultra-clean SiGe/Si/SiGe quantum wells,” Phys. Rev. B,Rapid Communication 102 (8), pp. 081119 (2020)
  • Hung-Yu Ye and C. W. Liu, On-Current Enhancement in TreeFET by Combining Vertically Stacked Nanosheets and Interbridges, IEEE Electron Device Letters. 41 (9), pp. 1292-1295 (2020)
  • Xiaoxue Liu et al., Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge/SiGe heterostructure, Phys. Rev. B 101 (7), 075304 (2020)  
  • M. Yu et al., Metallic state in a strongly interacting spinless two-valley electron system in two dimensions, Phys. Rev. B 101 (4), 045302 (2020)
  • (invited) C. W. Liu et al., Vertically Stacked High Mobility GeSi nGAAFETs, PRiME 2020 (ECS, ECSJ, & KECS Joint Meeting), Honolulu, Hawaii, Oct. 4-9, 2020
  • (invited) C. W. Liu et al., Stacked high mobility channel transistors, China Semiconductor Technology International Conference (CSTIC) 2020, Shanghai, China (Virtual Conference), June 26 - July 17, 2020
  • Hsiao-Hsuan Liu et al., Infrared Response of Stacked GeSn Transistors, 2020 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, April 20-23, 2020   

 

POLYTECHNIQUE MONTREAL

 

QuTech (TU Delft)

  • F. van Riggelen et al., A two-dimensional array of single-hole quantum dots, arXiv:2008.11666
  • M. Lodari et al., Low percolation density and charge noise with holes in germanium, arXiv:2007.06328
  • W. I. L. Lawrie et al., Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots, arXiv:2006.12563,
  • B. Paquelet Wuetz et al., Effect of quantum Hall edge strips on valley splitting in silicon quantum wells, arXiv:2006.02305,
  • P. Del Vecchio et al., Vanishing Zeeman energy in a two-dimensional hole gas., arXiv:2006.00102
  • P. Harvey-Collard et al., On-chip microwave filters for high-impedance resonators with gate-defined quantum dots, arXiv:2005.05411
  • Y. Xu et al., On-chip Integration of Si/SiGe-based Quantum Dots and Switched-capacitor Circuits, arXiv:2005.03851
  • T. Scappucci et al., The germanium quantum information route, arXiv:2004.08133 
  • N.W. Hendrickx et al., A single-hole spin qubit, Nat Commun 11, 3478 (2020)
  • B.P. Wuetz et al., Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures, npj Quantum Information 6, 43 (2020)
  • W. I. L. Lawrie et. al., Quantum Dot Arrays in Silicon and Germanium, Applied Physics Letters 116, 080501 (2020)
  • N. Hendrickx et al., Fast two-qubit logic with holes in germanium, Nature 577, 487 (2020)

 

Research Center Juelich - Peter Gruenberg Institute

 

Roma Tre

  • C. Ciano et al. Electron-phonon coupling in n-type Ge two-dimensional systems, Phys. Rev. B 102, 205302 (2020)
  • L. Bagolini et al. Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n-type Ge/SiGe quantum fountains, Phys. Rev. B 101, 245302 (2020) 
  • C. Ciano et al., Terahertz absorption-saturation and emission from electron-doped germanium quantum wells, Optics Express 28 (5), 724 (2020)
  • K. Gallacher et al., Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides, Optics Express 28 (4), 4786 (2020)
  • C. Ciano et al., Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models, Photonics 7 (1), 2 (2020), 
  • T. Grange et al., Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering, Phys. Rev. Applied 13, 044062 (2020)
  • L. Persichetti et. al., Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells, Crystals 10(3), 179 (2020)

 

Tohoku University

 

University of Milano-Bicocca (UNIMIB) (see also Materials and Lassem)

 

 

2019

 

CEA-LETI

 

CINTECX (University of VIGO)

  • M. C. J.Weiser et al., Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy, IEEE Proceedings MIPRO (2019) 1-6, DOI: 10.23919/MIPRO.2019.8756640, ISSN: 2623-8764, https://ieeexplore.ieee.org/document/8756640
  • J. Schlipf et al., Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy, J. Vac. Sci. Technol. B 37, 2166-2754 (2019), https://avs.scitation.org/doi/10.1116/1.5122777 (Uni-Vigo, Uni-Stuttgart, BTU, Horiba)

 

Eindhoven University of Technology (TUE)

 

HZDR 

 

IHP

 

IMB-CNM-CSIC

  • M. Cabello, et al., Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs, Materials Science in Semiconductor Processing 93, 357-359 (2019), https://www.sciencedirect.com/science/article/pii/S1369800118319309
  • E. Masvidal-Codina, et al., High-resolution mapping of infraslow cortical brain activity enabled by graphene microtransistors, Nature Materials 18, 280-299 (2019), https://www.nature.com/articles/s41563-018-0249-4
  • V. Banu, M. Popescu, P. Godignon, Delta Reference, the Latest High Temperature Compensated Voltage Reference Concept, European Space Power Conference (ESPC) Juan-les-Pins, FRANCE SEP 30-OCT 04, 2019

 

Imec

 

Kyushu Universiy

  • K. Yamamoto et al., Conduction Type Control of Ge-on-Insulator: Combination of Smart-CutTM and Defect Elimination, ECS transactions 93 (1), p. 73(2019) https://dx.doi.org/10.1149/09301.0073ecst
  • K. Moto et al., Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass, Appl. Phys. Lett. 114, p. 212107 (2019), https://doi.org/10.1063/1.5093952
  • K. Yamamoto et al., Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation, Jpn. J. Appl. Phys. 58, p. SBBA14 (2019), https://doi.org/10.7567/1347-4065/ab02e3
  • T. Maekura et al., Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate, Jpn. J. Appl. Phys., 58, p. SBBE05 (2019), https://doi.org/10.7567/1347-4065/aafb5e

 

Nagoya University

  • S. Miyazaki et al., Photoemission-based Characterization of Gate Dielectrics and Stack Interfaces, ECS Transactions 92 (4) 11 (2019), https://iopscience.iop.org/article/10.1149/09204.0011ecst
  • S.Fujimori et al, Effect of H2-dilution in Si-cap formation on photoluminescence intensity of Si quantum dots with Ge core, Japanese Journal of Applied Physics 58 SIIA01 (2019), https://doi.org/10.7567/1347-4065/ab0c7a
  • S. Miyazaki et al., Photoemission Characterization of Interface Dipoles and Electronic Defect States for Gate Dielectrics, ECS Transactions 90 (1) 113 (2019), https://doi.org/10.1149/09001.0113ecst
  • M. Kurosawa et al., Synthesis of heavily Ga-doped Si1xSnx/Si heterostructures and their valence-band-offset determination, Japanese Journal of Applied Physics. 58, SAAD02 (4 pages) (2019), https://doi.org/10.7567/1347-4065/aaeb36
  • Y. Miki et al., Influence of Sn precursors on Ge1xSnx growth using metal-organic chemical vapor deposition, Japanese Journal of Applied Physics 58, SAAD07 (7 pages) (2019), https://doi.org/10.7567/1347-4065/aaec1a
  • K. Takahashi et al., Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process, Applied Physics Express 12 (5), 051016 (5 pages) (2019), https://doi.org/10.7567/1882-0786/ab1969
  • M. Fukuda et al., Formation and Optoelectronic Property of Strain-relaxed Ge1xySixSny/Ge1xSnx/Ge1xySixSny Double Heterostructures on Boron-Ion-Implanted Ge(001) Substrate, Japanese Journal of Applied Physics 58, SIIB23 (2019), https://doi.org/10.7567/1347-4065/ab1b62
  • Y. Peng et al., Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation, Scientific Reports 9, 14342 (9 pages) (2019), https://doi.org/10.1038/s41598-019-50754-4

 

Nanyang Technological University - Nano Engineering Device Laboratory 

  • J. D. Kim et al., CMOS Compatible Catalyst for MacEtch: Titanium Nitride Assisted Chemical Etching in Vapor Phase for High Aspect Ratio Silicon Nanostructures, ACS Applied Materials & Interfaces, 11(30), 27371 (2019)
  • H.-C. Huang et al., High Aspect Ratio β-Ga2O3 Fin Arrays with Low Interface Charge Density by Inverse Metal-Assisted Chemical Etching, ACS Nano, 13(8), 8784 (2019). This article has been highlighted in Science Daily, Laser Focus World, Phys.Org, and more.
  • S. J. Cho et al., P-type silicon as hole supplier for nitride-based UVC LEDs, New Journal of Physics, 21(2), 023011 (2019)
  • M. Kim et al., Flexible Photodetectors with Nanomembranes and Nanowires, Wiley‐VCH Verlag GmbH & Co. KGaA (2019). (book chapter)

 

National Taiwan University

  • Yu-Shiang Huang et al., First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=40nm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise, p. 689, International Electron Devices Meeting (IEDM), 2019.
  • Chien-Te Tu et al., First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μA at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V, p. 681, International Electron Devices Meeting (IEDM), 2019.
  • Min-Hung Lee et al., Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs, p. 566, International Electron Devices Meeting (IEDM), 2019.
  • Yu-Shiang Huang et al., First Vertically Stacked, Compressively Strained, and Triangular Ge0.91Sn0.09 pGAAFETs with High ION of 19.3μA at VOV=VDS=-0.5V, Gm of 50.2μS at VDS=-0.5V and Low SSlin of 84mV/dec by CVD Epitaxy and Orientation Dependent Etching, Symposia on VLSI Technology and Circuits (VLSI), pp. 180-181, 2019
  • Fang-Liang Lu et al., Record Low Contact Resistivity (4.4x10-10Ω-cm2) to Ge Using In-situ B and Sn Incorporation by CVD with Low Thermal Budget (≤400℃) and Without Ga, Symposia on VLSI Technology and Circuits (VLSI), pp. 178-179 2019 
  • Yu-Shiang Huang et al., Novel Vertically-Stacked Tensily-Strained Ge0.85Si0.15 GAA n-Channels on a Si Channel with SS=76mV/dec, DIBL=36mV/V, and Ion/Ioff=1.2E7, 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, April 22-25, 2019.

 

POLYTECHNIQUE MONTREAL

  • S. Assali et al., Vacancy complexes in nonequilibrium germanium-tin semiconductors, Applied Physics Letters 114, 251907 (2019), DOI: https://doi.org/10.1063/1.5108878 
  • M. Fortin-Deschênes et al., Dynamics of Antimonene-Graphene van der Waals Growth, Advanced Materials 31, 1900569 (2019), DOI: https://doi.org/10.1002/adma.201900569
  • R. M. Jacobberger et al., Alignment of semiconducting graphene nanoribbons on vicinal Ge(001), Nanoscale 14, 4864 (2019), DOI: https://doi.org/10.1039/C9NR00713J
  • S. Assali et al., Enhanced Sn incorporation in GeSn epitaxial layers via strain relaxation, Journal of Applied Physics 125, 025304 (2019), DOI: https://doi.org/10.1063/1.5050273

 

QuTech (TU Delft)

 

Research Center Juelich - Peter Gruenberg Institute

 

Roma Tre

 

University of Milano-Bicocca (UNIMIB)

 

 

2018

 

CEA-LETI

 

Eindhoven University of Technology (TUE)

 

HZDR

 

IHP

 

IMB-CNM-CSIC

 

Imec

 

Kyushu University

  • W.-C. Wen et al., Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy J. Appl. Phys., 124, (20), p. 205303 (2018), https://doi.org/10.1063/1.5055291
  • K. Yamamoto et al., Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition, Semiconductor Science and Technology, 33, p. 114011 (2018), https://doi.org/10.1088/1361-6641/aae4bd

 

Nagoya University

  • R. Nagai et al., Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core, Semiconductor Science and Technology 33 124021 (2018), https://doi.org/10.1088/1361-6641/aaebbc
  • Y. Futamura et al., Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy, Japanese Journal of Applied Physics 58 SAAE01 (2018), https://doi.org/10.7567/1347-4065/aaeb38
  • H. Zhang et al., High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots, ECS Transactions 86 (7), 131 (2018), doi:10.1149/08607.0131ecst
  • Y. Wen et al., Formation of Mn-germanide nanodots on ultrathin SiO2 induced by remote hydrogen plasma, Japanese Journal of Applied Physics 57 01AF05 (2018), https://doi.org/10.7567/JJAP.57.01AF05
  • K. Ito et al., Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient, Japanese Journal of Applied Physics 57 06HD08 (2018), https://doi.org/10.7567/JJAP.57.06HD08
  • K. Ito et al., Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si+Ge) compositions, Japanese Journal of Applied Physics 57, 04FJ05 (2018), https://iopscience.iop.org/article/10.7567/JJAP.57.04FJ05
  • K. Makihara et al., Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection, Applied Physics Express 11, 011305 (2018), https://doi.org/10.7567/APEX.11.011305
  • S. Ike et al., Epitaxial growth of heavily doped n+-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping, Thin Solid films 645 (1), 57-63 (2018), https://doi.org/10.1016/j.tsf.2017.10.013
  • W. Takeuchi et al., Selective growth of Ge1-xSnx epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition, Japanese Journal of Applied Physics 57 (1S), 01AC05 (5 pages) (2018), https://doi.org/10.7567/JJAP.57.01AC05
  • K. Takahashi et al., High n-type Sb dopant activation in Ge-rich poly-Ge1−xSnx layers on SiO2 using pulsed laser annealing in flowing water, Applied Physics Letters 112, 062104 (4 pages) (2018), https://doi.org/10.1063/1.4997369
  • K. Takahashi et al., Dopant behavior in heavily doped polycrystalline Ge1−xSnx layers prepared with pulsed laser annealing in water, Japanese Journal of Applied Physics 57 (4S), 04FJ02 (6 pages) (2018), https://doi.org/10.7567/JJAP.57.04FJ02
  • A. Suzuki et al., Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched SixGe1−x−ySny ternary alloy interlayer on Ge, Japanese Journal of Applied Physics 57 (6), 07MA05 (5 pages) (2018), https://doi.org/10.7567/JJAP.57.060304
  • O. Nakatsuka et al., Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties, Japanese Journal of Applied Physics 57 (7S2), 060304 (4 pages) (2018), https://doi.org/10.7567/JJAP.57.07MA05
  • J. Jeon et al., Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n+-Ge1−xSnx structure, Semiconductor Science and Technology 33 (12), 124001 (2018), https://doi.org/10.1088/1361-6641/aae624
  • M. Fukuda et al., Optoelectronic properties of high-Si-content-Ge1−x–ySixSny/Ge1−xSnx/Ge1−x–ySixSny double heterostructure, Semiconductor Science and Technology 33 (12), 124018 (8 pages) (2018), https://doi.org/10.1088/1361-6641/aaebb5
  • J. Jeon et al., Growth and electrical properties of in situ Sb-doped Ge1−xSnx epitaxial layers for source/drain stressor of strained-Ge transistors, Japanese Journal of Applied Physics 57 (12), 121303 (6 pages) (2018), https://doi.org/10.7567/JJAP.57.121303

 

Nanyang Technological University - Nano Engineering Device Laboratory 

 

QuTech (TU Delft)

 

Research Center Juelich - Peter Gruenberg Institute

 

Roma Tre

  • M. Montanari et. al., Photoluminescence study of inter-band transitions in few, pseudomorphic and strain-unbalanced Ge/GeSi multiple quantum wells, Physical Review B 98, 195310 (2018) https://doi.org/10.1103/PhysRevB.98.195310.
  • L. Di Gaspare et al. Early stage of CVD graphene synthesis on Ge(001) substrate,  Carbon 134, 183  (2018) https://www.sciencedirect.com/science/article/pii/S0008622318303439
  • L. Persichetti, et al. Formation of extended thermal etch pits on annealed Ge wafers, Applied Surface Science 462, 86 (2018). 10.1016/j.apsusc.2018.08.075.

 

Shizuoka University

 

Tohoku University

  • J. Murota et al., Atomically controlled processing for dopant segregation in CVD Si and Ge epitaxial growth, ECS Journal of Solid State Science and Technology 7 (6), P305 (2018), http://jss.ecsdl.org/content/7/6/P305.short

 

University of Milano-Bicocca (UNIMIB)