Conference Proceedings:

 

Journal Papers (list is updated on a regular base)

 

2021

 

AMO + R.W.T.H. Aachen (Center for Micro and Nanoelectronic Systems - MINAS):

 

Imec:

 

POLYTECHNIQUE MONTREAL

 

Shizuoka University:

 

Tohoku University: 

 

2020

Aalto University:

  • J. Slotte et al., In Situ Positron Annihilation Spectroscopy Analysis on Low Temperature Irradiated Semiconductors, Challenges and Possibilities, physica status solidi A, 2000232 (2020)
  • A. Khanam et al., A demonstration of donor passivation through direct formation of V-Asi complexes in As-doped Ge1−xSnx, J. Appl. Phys. 127, 195703 (2020)

 

AMO + R.W.T.H. Aachen (Center for Micro and Nanoelectronic Systems - MINAS):

 

Brandenburgische Technische Universität (BTU):

 

CEA-LETI:

 

Eindhoven University of Technology (TUE):  

 

IHP:

 

 IMB-CNM-CSIC: 

 

Imec:

 

Kyushu University:

  • T. Imajo et al., Underlayer Selection to Improve the Performance of Polycrystalline Ge Thin Film Transistors, ECS Transactions 98 (5), 423 (2020)
  • W.-C. Wen et al., Interface trap and border trap characterization for Al2O3/GeOx/Ge gate stacks and influence of these traps on mobility of Ge p-MOSFET, AIP advances, AIP Advances 10, 065119 (2020)
  • R. Oka et al., High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al2O3 interlayer and its internal charge analysis, Jpn. J. Appl. Phys., 59, p. SGGD17 (2020)

 

Nagoya University (see also here and here): 

 

National Taiwan University: 

 

POLYTECHNIQUE MONTREAL

 

QuTech (TU Delft):

  • F. van Riggelen et al., A two-dimensional array of single-hole quantum dots, arXiv:2008.11666
  • M. Lodari et al., Low percolation density and charge noise with holes in germanium, arXiv:2007.06328
  • W. I. L. Lawrie et al., Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots, arXiv:2006.12563,
  • B. Paquelet Wuetz et al., Effect of quantum Hall edge strips on valley splitting in silicon quantum wells, arXiv:2006.02305,
  • P. Del Vecchio et al., Vanishing Zeeman energy in a two-dimensional hole gas., arXiv:2006.00102
  • P. Harvey-Collard et al., On-chip microwave filters for high-impedance resonators with gate-defined quantum dots, arXiv:2005.05411
  • Y. Xu et al., On-chip Integration of Si/SiGe-based Quantum Dots and Switched-capacitor Circuits, arXiv:2005.03851
  • T. Scappucci et al., The germanium quantum information route, arXiv:2004.08133 
  • N.W. Hendrickx et al., A single-hole spin qubit, Nat Commun 11, 3478 (2020)
  • B.P. Wuetz et al., Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures, npj Quantum Information 6, 43 (2020)
  • W. I. L. Lawrie et. al., Quantum Dot Arrays in Silicon and Germanium, Applied Physics Letters 116, 080501 (2020)
  • N. Hendrickx et al., Fast two-qubit logic with holes in germanium, Nature 577, 487 (2020)

 

Research Center Juelich - Peter Gruenberg Institute: 

 

Roma Tre:

  • C. Ciano et al. Electron-phonon coupling in n-type Ge two-dimensional systems, Phys. Rev. B 102, 205302 (2020)
  • L. Bagolini et al. Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n-type Ge/SiGe quantum fountains, Phys. Rev. B 101, 245302 (2020) 
  • C. Ciano et al., Terahertz absorption-saturation and emission from electron-doped germanium quantum wells, Optics Express 28 (5), 724 (2020)
  • K. Gallacher et al., Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides, Optics Express 28 (4), 4786 (2020)
  • C. Ciano et al., Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models, Photonics 7 (1), 2 (2020), 
  • T. Grange et al., Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering, Phys. Rev. Applied 13, 044062 (2020)
  • L. Persichetti et. al., Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells, Crystals 10(3), 179 (2020)

 

Tohoku University:

 

University of Milano-Bicocca (UNIMIB) (see also Materials and Lassem): 

  • L. Becker et al., Controlling the relaxation mechanism of low strain Si1-xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source, J. Appl. Phys. 128, 215305 (2020)
  • D. Lanzoni, F. Rovaris, and F. Montalenti, Computational Analysis of Low-Energy Dislocation Configurations in Graded Layers, Crystals 10, 661 (2020)
  • E. Scalise et al., The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach, J. Mat. Chem. C 8, 8380 (2020), 
  • A. Barzaghi et al., Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned SubstratesCryst. Growth. & Des. 20, 2914 (2020)
  • S. Assali et al., Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires, ACS Nano 14, 2445 (2020),
  • A. Sarikov et al., Molecular dynamics simulations of extended defects and their evolution in 3C?SiC by different potentials, Modelling and Sim. in Mat. Sci. & Engin. 28, 015002 (2020)
  • E. Vitiello et al., Magneto-optical determination of the carrier lifetime in coherent Ge(1-x)Sn(x)/Ge heterostructures, arXiv:2009.01087
  • J. Pedrini et al., Broadband control of the optical properties of semiconductors through site-controlled self-assembly of microcrystals, Optics express, 28, 24981 (2020),

 

2019

Brandenburgische Technische Universität (BTU):

 

CEA-LETI:

 

CINTECX (University of VIGO):

  • M. C. J.Weiser et al., Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy, IEEE Proceedings MIPRO (2019) 1-6, DOI: 10.23919/MIPRO.2019.8756640, ISSN: 2623-8764, https://ieeexplore.ieee.org/document/8756640
  • J. Schlipf et al. Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy, J. of Vacuum Science and Technology B: Nanotechnology and Microelectronics B 37, 061213 (2019) 1-6, https://doi.org/10.1116/1.5122777¨

 

Eindhoven University of Technology (TUE):

 

IHP:

 

IMB-CNM-CSIC:

  • M. Cabello, et al., Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs, Materials Science in Semiconductor Processing 93, 357-359 (2019), https://www.sciencedirect.com/science/article/pii/S1369800118319309
  • E. Masvidal-Codina, et al., High-resolution mapping of infraslow cortical brain activity enabled by graphene microtransistors, Nature Materials 18, 280-299 (2019), https://www.nature.com/articles/s41563-018-0249-4
  • V. Banu, M. Popescu, P. Godignon, Delta Reference, the Latest High Temperature Compensated Voltage Reference Concept, European Space Power Conference (ESPC) Juan-les-Pins, FRANCE SEP 30-OCT 04, 2019

 

Imec:

 

Kyushu Universiy: 

  • K. Yamamoto et al., Conduction Type Control of Ge-on-Insulator: Combination of Smart-CutTM and Defect Elimination, ECS transactions 93 (1), p. 73(2019) https://dx.doi.org/10.1149/09301.0073ecst
  • K. Moto et al., Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass, Appl. Phys. Lett. 114, p. 212107 (2019), https://doi.org/10.1063/1.5093952
  • K. Yamamoto et al., Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation, Jpn. J. Appl. Phys. 58, p. SBBA14 (2019), https://doi.org/10.7567/1347-4065/ab02e3
  • T. Maekura et al., Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate, Jpn. J. Appl. Phys., 58, p. SBBE05 (2019), https://doi.org/10.7567/1347-4065/aafb5e

 

Nagoya University: 

  • S. Miyazaki et al., Photoemission-based Characterization of Gate Dielectrics and Stack Interfaces, ECS Transactions 92 (4) 11 (2019), https://iopscience.iop.org/article/10.1149/09204.0011ecst
  • S.Fujimori et al, Effect of H2-dilution in Si-cap formation on photoluminescence intensity of Si quantum dots with Ge core, Japanese Journal of Applied Physics 58 SIIA01 (2019), https://doi.org/10.7567/1347-4065/ab0c7a
  • S. Miyazaki et al., Photoemission Characterization of Interface Dipoles and Electronic Defect States for Gate Dielectrics, ECS Transactions 90 (1) 113 (2019), https://doi.org/10.1149/09001.0113ecst
  • M. Kurosawa et al., Synthesis of heavily Ga-doped Si1xSnx/Si heterostructures and their valence-band-offset determination, Japanese Journal of Applied Physics. 58, SAAD02 (4 pages) (2019), https://doi.org/10.7567/1347-4065/aaeb36
  • Y. Miki et al., Influence of Sn precursors on Ge1xSnx growth using metal-organic chemical vapor deposition, Japanese Journal of Applied Physics 58, SAAD07 (7 pages) (2019), https://doi.org/10.7567/1347-4065/aaec1a
  • K. Takahashi et al., Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process, Applied Physics Express 12 (5), 051016 (5 pages) (2019), https://doi.org/10.7567/1882-0786/ab1969
  • M. Fukuda et al., Formation and Optoelectronic Property of Strain-relaxed Ge1xySixSny/Ge1xSnx/Ge1xySixSny Double Heterostructures on Boron-Ion-Implanted Ge(001) Substrate, Japanese Journal of Applied Physics 58, SIIB23 (2019), https://doi.org/10.7567/1347-4065/ab1b62
  • Y. Peng et al., Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation, Scientific Reports 9, 14342 (9 pages) (2019), https://doi.org/10.1038/s41598-019-50754-4

 

National Taiwan University: 

  • Yu-Shiang Huang et al., First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=40nm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise, p. 689, International Electron Devices Meeting (IEDM), 2019.
  • Chien-Te Tu et al., First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μA at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V, p. 681, International Electron Devices Meeting (IEDM), 2019.
  • Min-Hung Lee et al., Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs, p. 566, International Electron Devices Meeting (IEDM), 2019.

 

POLYTECHNIQUE MONTREAL:

  • S. Assali et al., Vacancy complexes in nonequilibrium germanium-tin semiconductors, Applied Physics Letters 114, 251907 (2019), DOI: https://doi.org/10.1063/1.5108878 
  • M. Fortin-Deschênes et al., Dynamics of Antimonene-Graphene van der Waals Growth, Advanced Materials 31, 1900569 (2019), DOI: https://doi.org/10.1002/adma.201900569
  • R. M. Jacobberger et al., Alignment of semiconducting graphene nanoribbons on vicinal Ge(001), Nanoscale 14, 4864 (2019), DOI: https://doi.org/10.1039/C9NR00713J
  • S. Assali et al., Enhanced Sn incorporation in GeSn epitaxial layers via strain relaxation, Journal of Applied Physics 125, 025304 (2019), DOI: https://doi.org/10.1063/1.5050273

 

QuTech (TU Delft): 

 

Research Center Juelich - Peter Gruenberg Institute:

 

Roma Tre: 

 

University of Milano-Bicocca (UNIMIB):

 

2018

CEA-LETI:

 

Eindhoven University of Technology (TUE): 

 

IHP:

 

IMB-CNM-CSIC:

 

Imec:

 

Kyushu University: 

  • W.-C. Wen et al., Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy J. Appl. Phys., 124, (20), p. 205303 (2018), https://doi.org/10.1063/1.5055291
  • K. Yamamoto et al., Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition, Semiconductor Science and Technology, 33, p. 114011 (2018), https://doi.org/10.1088/1361-6641/aae4bd

 

Nagoya University:

  • R. Nagai et al., Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core, Semiconductor Science and Technology 33 124021 (2018), https://doi.org/10.1088/1361-6641/aaebbc
  • Y. Futamura et al., Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy, Japanese Journal of Applied Physics 58 SAAE01 (2018), https://doi.org/10.7567/1347-4065/aaeb38
  • H. Zhang et al., High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots, ECS Transactions 86 (7), 131 (2018), doi:10.1149/08607.0131ecst
  • Y. Wen et al., Formation of Mn-germanide nanodots on ultrathin SiO2 induced by remote hydrogen plasma, Japanese Journal of Applied Physics 57 01AF05 (2018), https://doi.org/10.7567/JJAP.57.01AF05
  • K. Ito et al., Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient, Japanese Journal of Applied Physics 57 06HD08 (2018), https://doi.org/10.7567/JJAP.57.06HD08
  • K. Ito et al., Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si+Ge) compositions, Japanese Journal of Applied Physics 57, 04FJ05 (2018), https://iopscience.iop.org/article/10.7567/JJAP.57.04FJ05
  • K. Makihara et al., Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection, Applied Physics Express 11, 011305 (2018), https://doi.org/10.7567/APEX.11.011305
  • S. Ike et al., Epitaxial growth of heavily doped n+-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping, Thin Solid films 645 (1), 57-63 (2018), https://doi.org/10.1016/j.tsf.2017.10.013
  • W. Takeuchi et al., Selective growth of Ge1-xSnx epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition, Japanese Journal of Applied Physics 57 (1S), 01AC05 (5 pages) (2018), https://doi.org/10.7567/JJAP.57.01AC05
  • K. Takahashi et al., High n-type Sb dopant activation in Ge-rich poly-Ge1−xSnx layers on SiO2 using pulsed laser annealing in flowing water, Applied Physics Letters 112, 062104 (4 pages) (2018), https://doi.org/10.1063/1.4997369
  • K. Takahashi et al., Dopant behavior in heavily doped polycrystalline Ge1−xSnx layers prepared with pulsed laser annealing in water, Japanese Journal of Applied Physics 57 (4S), 04FJ02 (6 pages) (2018), https://doi.org/10.7567/JJAP.57.04FJ02
  • A. Suzuki et al., Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched SixGe1−x−ySny ternary alloy interlayer on Ge, Japanese Journal of Applied Physics 57 (6), 07MA05 (5 pages) (2018), https://doi.org/10.7567/JJAP.57.060304
  • O. Nakatsuka et al., Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties, Japanese Journal of Applied Physics 57 (7S2), 060304 (4 pages) (2018), https://doi.org/10.7567/JJAP.57.07MA05
  • J. Jeon et al., Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n+-Ge1−xSnx structure, Semiconductor Science and Technology 33 (12), 124001 (2018), https://doi.org/10.1088/1361-6641/aae624
  • M. Fukuda et al., Optoelectronic properties of high-Si-content-Ge1−x–ySixSny/Ge1−xSnx/Ge1−x–ySixSny double heterostructure, Semiconductor Science and Technology 33 (12), 124018 (8 pages) (2018), https://doi.org/10.1088/1361-6641/aaebb5
  • J. Jeon et al., Growth and electrical properties of in situ Sb-doped Ge1−xSnx epitaxial layers for source/drain stressor of strained-Ge transistors, Japanese Journal of Applied Physics 57 (12), 121303 (6 pages) (2018), https://doi.org/10.7567/JJAP.57.121303

 

QuTech (TU Delft):

 

Research Center Juelich - Peter Gruenberg Institute:

 

Roma Tre: 

  • M. Montanari et. al., Photoluminescence study of inter-band transitions in few, pseudomorphic and strain-unbalanced Ge/GeSi multiple quantum wells, Physical Review B 98, 195310 (2018) https://doi.org/10.1103/PhysRevB.98.195310.
  • L. Di Gaspare et al. Early stage of CVD graphene synthesis on Ge(001) substrate,  Carbon 134, 183  (2018) https://www.sciencedirect.com/science/article/pii/S0008622318303439
  • L. Persichetti, et al. Formation of extended thermal etch pits on annealed Ge wafers, Applied Surface Science 462, 86 (2018). 10.1016/j.apsusc.2018.08.075.

 

Shizuoka University:

 

Tohoku University:

  • J. Murota et al., Atomically controlled processing for dopant segregation in CVD Si and Ge epitaxial growth, ECS Journal of Solid State Science and Technology 7 (6), P305 (2018), http://jss.ecsdl.org/content/7/6/P305.short

 

University of Milano-Bicocca (UNIMIB):